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Fujieda, Shinji, Matsumoto, Yoshishige (1991) Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1665

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Reference TypeJournal (article/letter/editorial)
TitleStructure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
JournalJapanese Journal of Applied Physics
AuthorsFujieda, ShinjiAuthor
Matsumoto, YoshishigeAuthor
Year1991 (September 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1665Search in ResearchGate
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Mindat Ref. ID14996856Long-form Identifiermindat:1:5:14996856:2
GUID0
Full ReferenceFujieda, Shinji, Matsumoto, Yoshishige (1991) Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1665
Plain TextFujieda, Shinji, Matsumoto, Yoshishige (1991) Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1665
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Fujieda, Shinji, Mochizuki, Yasunori, Akimoto, Koichi, Hirosawa, Ichiro, Matsumoto, Yoshishige, Matsui, Junji (1990) Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l364
Fujieda, Shinji, Mizuta, Masashi, Matsumoto, Yoshishige (1988) Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l296
Mizuta, Masashi, Fujieda, Shinji, Matsumoto, Yoshishige, Kawamura, Tsutomu (1986) Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l945
Akimoto, Koichi, Hirosawa, Ichiro, Mizuki, Jun'ichiro, Fujieda, Shinji, Matsumoto, Yoshishige, Matsui, Junji (1988) Interfacial Superstructure of AlN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1401
Kobayashi, Naoki, Horikoshi, Yoshiji (1991) Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l319
Rao, T. Sudersena, Nozawa, Kazuhiko, Horikoshi, Yoshiji (1991) Structural Properties of (GaAs)1-x(Si2)xLayers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l547
Tanaka, Ichiro, Ohkouchi, Shunsuke (1991) GaAs Heteroepitaxial Growth on an InP (001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1662
Fujieda, Shinji, Mizuta, Masashi, Matsumoto, Yoshishige (1987) Growth Characterization of Low-Temperature MOCVD GaN–Comparison between N2H4and NH3–. Japanese Journal of Applied Physics, 26. 2067-2071 doi:10.1143/jjap.26.2067
Kobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781
Nozawa, Kazuhiko, Horikoshi, Yoshiji (1991) Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l668
Watanabe, Heiji, Matsui, Shinji (1991) GaAs Dry Etching Using Electron Beam Induced Surface Reaction. Japanese Journal of Applied Physics, 30. 3190-3194 doi:10.1143/jjap.30.3190
 
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