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Tanaka, Ichiro, Ohkouchi, Shunsuke (1991) GaAs Heteroepitaxial Growth on an InP (001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1662

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Reference TypeJournal (article/letter/editorial)
TitleGaAs Heteroepitaxial Growth on an InP (001) Substrate
JournalJapanese Journal of Applied Physics
AuthorsTanaka, IchiroAuthor
Ohkouchi, ShunsukeAuthor
Year1991 (September 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1662Search in ResearchGate
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Mindat Ref. ID14996855Long-form Identifiermindat:1:5:14996855:5
GUID0
Full ReferenceTanaka, Ichiro, Ohkouchi, Shunsuke (1991) GaAs Heteroepitaxial Growth on an InP (001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1662
Plain TextTanaka, Ichiro, Ohkouchi, Shunsuke (1991) GaAs Heteroepitaxial Growth on an InP (001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1662
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Ohkouchi, Shunsuke, Tanaka, Ichiro (1991) Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1826
Ohkouchi, Shunsuke, Ikoma, Nobuyuki (1994) Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces. Japanese Journal of Applied Physics, 33. 3710-3714 doi:10.1143/jjap.33.3710
Ohkouchi, Shunsuke, Tanaka, Ichiro (1992) Scanning tunneling microscopy of GaAs-on-InP heteroepitaxial growth. Ultramicroscopy, 42. 771-775 doi:10.1016/0304-3991(92)90356-o
Tsukada, Ichiro, Uchinokura, Kunimitsu (1991) Nearly Untwinned Superconducting Bi2Sr2CuOyThin Films Grown on (Y, Nd)AlO3(001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1468
Ohkouchi, Shunsuke, Tanaka, Ichiro, Ikoma, Nobuyuki (1994) Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates. Japanese Journal of Applied Physics, 33. 1489-1493 doi:10.1143/jjap.33.1489
Ohkouchi, Shunsuke, Ikoma, Nobuyuki (1994) Shape Transition of GaAs Islands Grown on InAs (001) Surfaces. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l470
Nagata, Hirotoshi, Tsukahara, Tadashi, Gonda, Satoshi, Yoshimoto, Mamoru, Koinuma, Hideomi (1991) Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1136
Tanaka, Ichiro, Ohkouchi, Shunsuke (1993) Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces. Japanese Journal of Applied Physics, 32. 2152-2156 doi:10.1143/jjap.32.2152
Okuyama, Hiroyuki, Nakano, Kazushi, Miyajima, Takao, Akimoto, Katsuhiro (1991) Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1620
Bhattacharya, Pijush, Bose, Dwarka N. (1991) Laser Deposition of AlN Thin Films on InP and GaAs. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1750
Ikoma, Nobuyuki, Ohkouchi, Shunsuke (1995) InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l724
 
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