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Ohkouchi, Shunsuke, Tanaka, Ichiro (1991) Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1826

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Reference TypeJournal (article/letter/editorial)
TitleAtomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces
JournalJapanese Journal of Applied Physics
AuthorsOhkouchi, ShunsukeAuthor
Tanaka, IchiroAuthor
Year1991 (October 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1826Search in ResearchGate
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Mindat Ref. ID14996911Long-form Identifiermindat:1:5:14996911:8
GUID0
Full ReferenceOhkouchi, Shunsuke, Tanaka, Ichiro (1991) Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1826
Plain TextOhkouchi, Shunsuke, Tanaka, Ichiro (1991) Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1826
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Tanaka, Ichiro, Ohkouchi, Shunsuke (1991) GaAs Heteroepitaxial Growth on an InP (001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1662
Tanaka, Ichiro, Ohkouchi, Shunsuke, Hashimoto, Akihiro (1992) Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy. Japanese Journal of Applied Physics, 31. 2216-2220 doi:10.1143/jjap.31.2216
Ikoma, Nobuyuki, Ohkouchi, Shunsuke (1995) InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l724
Ohkouchi, Shunsuke, Ikoma, Nobuyuki (1994) Shape Transition of GaAs Islands Grown on InAs (001) Surfaces. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l470
Tanaka, Ichiro, Ohkouchi, Shunsuke (1993) Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces. Japanese Journal of Applied Physics, 32. 2152-2156 doi:10.1143/jjap.32.2152
Ohkouchi, Shunsuke, Ikoma, Nobuyuki (1994) Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces. Japanese Journal of Applied Physics, 33. 3710-3714 doi:10.1143/jjap.33.3710
Ohkouchi, Shunsuke, Tanaka, Ichiro, Ikoma, Nobuyuki (1994) Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates. Japanese Journal of Applied Physics, 33. 1489-1493 doi:10.1143/jjap.33.1489
Ohkouchi, Shunsuke, Ikoma, Nobuyuki (1994) Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l1700
Yamaguchi, Ko-ichi, Okamoto, Kotaro (1991) Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l231
Fujieda, Shinji, Matsumoto, Yoshishige (1991) Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1665
Tsukada, Ichiro, Uchinokura, Kunimitsu (1991) Nearly Untwinned Superconducting Bi2Sr2CuOyThin Films Grown on (Y, Nd)AlO3(001) Substrate. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1468
 
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