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Iwanari, Shun-ichi, Takayanagi, Kunio (1991) Surfactant Epitaxy of Si on Si(111) Mediated by Sn. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1978

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Reference TypeJournal (article/letter/editorial)
TitleSurfactant Epitaxy of Si on Si(111) Mediated by Sn
JournalJapanese Journal of Applied Physics
AuthorsIwanari, Shun-ichiAuthor
Takayanagi, KunioAuthor
Year1991 (November 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1978Search in ResearchGate
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Mindat Ref. ID14996962Long-form Identifiermindat:1:5:14996962:0
GUID0
Full ReferenceIwanari, Shun-ichi, Takayanagi, Kunio (1991) Surfactant Epitaxy of Si on Si(111) Mediated by Sn. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1978
Plain TextIwanari, Shun-ichi, Takayanagi, Kunio (1991) Surfactant Epitaxy of Si on Si(111) Mediated by Sn. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1978
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Iwanari, S., Kimura, Y., Takayanagi, K. (1992) Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer II. Critical step flow of the growth with and without mediate. Journal of Crystal Growth, 119 (3). 241-247 doi:10.1016/0022-0248(92)90676-a
Iwanari, S., Takayanagi, K. (1992) Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flow. Journal of Crystal Growth, 119 (3). 229-240 doi:10.1016/0022-0248(92)90675-9
Aizawa, Noriyuki, Homma, Yoshikazu, Tomita, Masahito (1998) Electron Microscopy Study of Surfactant-Mediated Solid Phase Epitaxy of Ge on Si(111) Japanese Journal of Applied Physics, 37. 2460-2467 doi:10.1143/jjap.37.2460
Nozawa, Kazuhiko, Horikoshi, Yoshiji (1991) Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l668
Shibata, Akihide, Takayanagi, Kunio (1993) Restructuring of the Reconstructed Si(111)7Γ—7 Surface by Metal(Au, Ag) Deposition. Japanese Journal of Applied Physics, 32. 1385-1388 doi:10.1143/jjap.32.1385
Hashimoto, Akihiro, Sugiyama, Naoharu, Tamura, Masao (1991) Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l447
Uchigoshi, Masahiro, Tsutsui, Kazuo, Furukawa, Seijiro (1991) Photoluminescence from GaAs/CaF2/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l444
Hosono, Akihiko, Shimada, Yutaka (1991) Magnetic Softness of Fe-1.5 wt.%Si Single-Crystal Films Deposited on GaAs(111) Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1169
Ishiwara, Hiroshi, Jyokyu, Katsuyoshi (1991) Formation of Conductive SrVO3Films on Si Substrates. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2059
Omuro, Keisuke, Miura, Harumatsu (1991) Synthesis of Amorphous Powders of Ni-Si and Co-Si Alloys by Mechanical Alloying. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l851
Yamanaka, Toshiro, Ino, Shozo (1996) Atomic Depth Distribution Analysis of In and Ga on Si(111) during Epitaxial Growth and New Surfactant-Mediated Epitaxy. Japanese Journal of Applied Physics, 35. 3991-3998 doi:10.1143/jjap.35.3991
 
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