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Shigetomi, Shigeru, Ikari, Tesuo (1991) Crystalline InSe Films Prepared by RF-Sputtering Technique. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2127

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Reference TypeJournal (article/letter/editorial)
TitleCrystalline InSe Films Prepared by RF-Sputtering Technique
JournalJapanese Journal of Applied Physics
AuthorsShigetomi, ShigeruAuthor
Ikari, TesuoAuthor
Year1991 (December 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l2127Search in ResearchGate
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Mindat Ref. ID14997013Long-form Identifiermindat:1:5:14997013:8
GUID0
Full ReferenceShigetomi, Shigeru, Ikari, Tesuo (1991) Crystalline InSe Films Prepared by RF-Sputtering Technique. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2127
Plain TextShigetomi, Shigeru, Ikari, Tesuo (1991) Crystalline InSe Films Prepared by RF-Sputtering Technique. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2127
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Shigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1982) Annealing Behavior of Zn-Doped p-Type InSe. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l254
Shigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1988) Carrier Transport Mechanisms of InSe p-n Homojunction. Japanese Journal of Applied Physics, 27. 1271-1274 doi:10.1143/jjap.27.1271
Shigetomi, Shigeru, Ikari, Tetsuo (2000) Annealing Behavior of Layer Semiconductorp-InSe Doped with Hg. Japanese Journal of Applied Physics, 39. 1184-1185 doi:10.1143/jjap.39.1184
Tsunetomo, Keiji, Shimizu, Ryuichiro, Kawabuchi, Akira, Kitayama, Hayuyuki, Osaka, Yukio (1991) CuCl Microcrystallite-Doped SiO2Glass Thin Films Prepared by RF Sputtering. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l764
Shigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1981) Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l343
Shigetomi, Shigeru, Ikari, Tetsuo (2003) Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb. Japanese Journal of Applied Physics, 42. 6951-6954 doi:10.1143/jjap.42.6951
Shigetomi, Shigeru, Ikari, Tetsuo (2002) Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn. Japanese Journal of Applied Physics, 41. 5565-5566 doi:10.1143/jjap.41.5565
Shiomi, Shigeru, Ikeda, Takashi, Koshiro, Makoto, Masuda, Morio (1991) Effect of Substrate Bias on In-Plane Uniaxial Magnetic Anisotropy in Amorphous TbCo Films Prepared by DC-Sputtering. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l364
Saito, Yasuyoshi, Shiosaki, Tadashi (1991) Heteroepitaxial Growth of LiTaO3Single-Crystal Films by RF Magnetron Sputtering. Japanese Journal of Applied Physics, 30. 2204-2207 doi:10.1143/jjap.30.2204
Kaneko, Yasuhisa, Mikoshiba, Nobuo, Yamashita, Tsutomu (1991) Preparation of MgO Thin Films by RF Magnetron Sputtering. Japanese Journal of Applied Physics, 30. 1091-1092 doi:10.1143/jjap.30.1091
Takahashi, Kazuhiko, Iyori, Masahiro, Kamino, Maruo, Usuki, Tatsuro, Yoshisato, Yorinobu, Nakano, Shoichi (1991) Epitaxial Growth of Ba1-XKXBiO3Thin Films by High-Pressure Reactive RF-Magnetron Sputtering. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1480
 
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