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Shigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1982) Annealing Behavior of Zn-Doped p-Type InSe. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l254

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing Behavior of Zn-Doped p-Type InSe
JournalJapanese Journal of Applied Physics
AuthorsShigetomi, ShigeruAuthor
Ikari, TetsuoAuthor
Koga, YutakaAuthor
Shigetomi, ShigenobuAuthor
Year1982 (May 20)Volume21
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.21.l254Search in ResearchGate
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Mindat Ref. ID14985719Long-form Identifiermindat:1:5:14985719:4
GUID0
Full ReferenceShigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1982) Annealing Behavior of Zn-Doped p-Type InSe. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l254
Plain TextShigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1982) Annealing Behavior of Zn-Doped p-Type InSe. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l254
In(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics

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Shigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1981) Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l343
Shigetomi, Shigeru, Ikari, Tetsuo, Koga, Yutaka, Shigetomi, Shigenobu (1988) Carrier Transport Mechanisms of InSe p-n Homojunction. Japanese Journal of Applied Physics, 27. 1271-1274 doi:10.1143/jjap.27.1271
Shigetomi, Shigeru, Ikari, Tetsuo (2000) Annealing Behavior of Layer Semiconductorp-InSe Doped with Hg. Japanese Journal of Applied Physics, 39. 1184-1185 doi:10.1143/jjap.39.1184
Shigetomi, Shigeru, Ikari, Tetsuo (2003) Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb. Japanese Journal of Applied Physics, 42. 6951-6954 doi:10.1143/jjap.42.6951
Shigetomi, Shigeru, Ikari, Tetsuo, Nakashima, Hiroshi (1998) Annealing Behavior of Deep Trap Level in p-GaTe. Japanese Journal of Applied Physics, 37. 3282-3283 doi:10.1143/jjap.37.3282
Shigetomi, Shigeru, Ikari, Tetsuo (2002) Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn. Japanese Journal of Applied Physics, 41. 5565-5566 doi:10.1143/jjap.41.5565
Shigetomi, Shigeru, Ikari, Tetsuo (2007) Optical and Electrical Properties of p-GaSe Doped with In. Japanese Journal of Applied Physics, 46 (9) 5774-5776 doi:10.1143/jjap.46.5774
Shigetomi, Shigeru, Ikari, Tetsuo, Nishimura, Hideki (1993) Optical and Electrical Properties of p-GaAe Doped with Sb. Japanese Journal of Applied Physics, 32. 4042 doi:10.1143/jjap.32.4042b
Shigetomi, Shigeru, Ikari, Tetsuo (2009) Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge. Japanese Journal of Applied Physics, 48 (3) 30211 doi:10.1143/jjap.48.030211
Shigetomi, Shigeru, Ikari, Tesuo (1991) Crystalline InSe Films Prepared by RF-Sputtering Technique. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2127
Shigetomi, Shigeru, Ikari, Tetsuo, Nishimura, Hideki (1993) Optical and Electrical Properties of p-GaSe Doped with Sb. Japanese Journal of Applied Physics, 32. 2731-2734 doi:10.1143/jjap.32.2731
 
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