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Saito, Hideho, Kondo, Yasuhiro (1991) 4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l599

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Reference TypeJournal (article/letter/editorial)
Title4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching
JournalJapanese Journal of Applied Physics
AuthorsSaito, HidehoAuthor
Kondo, YasuhiroAuthor
Year1991 (April 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l599Search in ResearchGate
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Mindat Ref. ID14997145Long-form Identifiermindat:1:5:14997145:6
GUID0
Full ReferenceSaito, Hideho, Kondo, Yasuhiro (1991) 4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l599
Plain TextSaito, Hideho, Kondo, Yasuhiro (1991) 4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l599
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Saito, Hideho, Noguchi, Yoshio (1989) A Reflection-Type Surface-Emitting 1.3 µm InGaAsP/InP Laser Array with Microcoated Reflector. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1239
Saito, Hideho, Noguchi, Yoshio (1989) InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE. Japanese Journal of Applied Physics, 28. 1836-1842 doi:10.1143/jjap.28.1836
Okamoto, Hiroshi, Tadokoro, Takashi, Kondo, Yasuhiro, Nakao, Masashi (1997) Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers. Japanese Journal of Applied Physics, 36. 5365-5370 doi:10.1143/jjap.36.5365
Hirano, Makoto, Asai, Kazuyoshi (1991) GaAs Taper Etching by Mixture Gas Reactive Ion Etching System. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2136
Itoh, Masayuki, Honda, Takashi, Tsubaki, Kotaro (1991) Carrier Concentration in Quantum Wires Fabricated by Reactive Ion Beam Etching. Japanese Journal of Applied Physics, 30. 3551 doi:10.1143/jjap.30.3551
Itoh, Masayuki, Honda, Takashi, Tsubaki, Kotaro (1991) Carrier Concentration in Quantum Wires Fabricated by Reactive Ion Beam Etching. Japanese Journal of Applied Physics, 30. 2455-2458 doi:10.1143/jjap.30.2455
Nishibe, Tohru, Nunoue, Shin-ya (1990) Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2449
Sato, Kenji, Kano, Fumiyoshi, Kondo, Yasuhiro (1990) Self-Aligned Ridge-Waveguide DFB Lasers Emitting at 1.55 µm: Ridge-Width Dependence. Japanese Journal of Applied Physics, 29. 1946-1950 doi:10.1143/jjap.29.1946
Saito, Hideho, Noguchi, Yoshio (1993) Coupling Efficiencies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption. Japanese Journal of Applied Physics, 32. 812-818 doi:10.1143/jjap.32.812
Olesen, Hening, Saito, Shigeru, Mukai, Takaaki, Saitoh, Tadashi, Mikami, Osamu (1983) Solitary Spectral Linewidth and Its Reduction with External Grating Feedback for a 1.55 µm InGaAsP BH Laser. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l664
Yamamoto, Norio, Yokoyama, Kiyoyuki, Yamamoto, Mitsuo (1991) C-VAnalysis of Electrical Properties for PN Heterointerface in InP/InGaAsP Double-Heterojunction Laser Diode. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1722
 
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