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Yamamoto, Norio, Yokoyama, Kiyoyuki, Yamamoto, Mitsuo (1991) C-VAnalysis of Electrical Properties for PN Heterointerface in InP/InGaAsP Double-Heterojunction Laser Diode. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1722

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Reference TypeJournal (article/letter/editorial)
TitleC-VAnalysis of Electrical Properties for PN Heterointerface in InP/InGaAsP Double-Heterojunction Laser Diode
JournalJapanese Journal of Applied Physics
AuthorsYamamoto, NorioAuthor
Yokoyama, KiyoyukiAuthor
Yamamoto, MitsuoAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1722Search in ResearchGate
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Mindat Ref. ID14996875Long-form Identifiermindat:1:5:14996875:3
GUID0
Full ReferenceYamamoto, Norio, Yokoyama, Kiyoyuki, Yamamoto, Mitsuo (1991) C-VAnalysis of Electrical Properties for PN Heterointerface in InP/InGaAsP Double-Heterojunction Laser Diode. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1722
Plain TextYamamoto, Norio, Yokoyama, Kiyoyuki, Yamamoto, Mitsuo (1991) C-VAnalysis of Electrical Properties for PN Heterointerface in InP/InGaAsP Double-Heterojunction Laser Diode. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1722
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Yamamoto, Norio, Yokoyama, Kiyoyuki, Yamamoto, Mitsuo (1993) Carrier profile evaluation for a Zn‐doped InGaAsP/InGaAsP multiquantum well using a low‐temperature capacitance‐voltage method. Applied Physics Letters, 62 (3). 252-254 doi:10.1063/1.108981
Sugino, Takashi, Yamamoto, Hiroyuki, Shirafuji, Junji (1991) Hydrogenation of InP by Phosphine Plasma. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l948
Yamamoto, Eiji, Suda, Kazuya, Hamada, Madoka, Nogiwa, Seiji, Oki, Tokukoh (1991) Tunable Laser Diode Having a Complementary Twin-Active-Guide (CTAG) Structure. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1884
Yamamoto, Yoshihisa, Björk, Gunnar (1991) Lasers without Inversion in Microcavities. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2039
Saito, Hideho, Kondo, Yasuhiro (1991) 4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l599
Tsunetomo, Keiji, Yamamoto, Masaki, Osaka, Yukio (1991) Preparation and Properties of InxGa1-xAs Microcrystallites Embedded in SiO2Glass Films. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l521
Wolf, T., Borchert, B., Drögemüller, K., Amann, M.-C. (1991) Narrow-Linewidth InGaAsP/InP Metal-Clad Ridge-Waveguide Distributed Feedback Lasers. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l745
Morita, Norio, Kumakura, Mitsutaka (1991) Laser Cooling of a Helium Atomic Beam. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1678
Yamamoto, Takaya, Sakai, Kazuo, Akiba, Shigeyuki (1977) 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates. Japanese Journal of Applied Physics, 16 (9) 1699-1700 doi:10.1143/jjap.16.1699
Suemasu, Takashi, Miyamoto, Yasuyuki, Furuya, Kazuhito (1991) Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1702
Sugino, Takashi, Yamamoto, Hiroyuki, Sakamoto, Yoshifumi, Ninomiya, Hideaki, Shirafuji, Junji (1991) Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1439
 
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