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Matsuura, Hideharu, Morita, Kouhei, Nishikawa, Kazuhiro, Mizukoshi, Takeo, Segawa, Masaharu, Susaki, Wataru (2002) Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy. Japanese Journal of Applied Physics, 41. 496-500 doi:10.1143/jjap.41.496

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Reference TypeJournal (article/letter/editorial)
TitleAcceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy
JournalJapanese Journal of Applied Physics
AuthorsMatsuura, HideharuAuthor
Morita, KouheiAuthor
Nishikawa, KazuhiroAuthor
Mizukoshi, TakeoAuthor
Segawa, MasaharuAuthor
Susaki, WataruAuthor
Year2002 (February 15)Volume41
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.41.496Search in ResearchGate
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Mindat Ref. ID15018478Long-form Identifiermindat:1:5:15018478:4
GUID0
Full ReferenceMatsuura, Hideharu, Morita, Kouhei, Nishikawa, Kazuhiro, Mizukoshi, Takeo, Segawa, Masaharu, Susaki, Wataru (2002) Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy. Japanese Journal of Applied Physics, 41. 496-500 doi:10.1143/jjap.41.496
Plain TextMatsuura, Hideharu, Morita, Kouhei, Nishikawa, Kazuhiro, Mizukoshi, Takeo, Segawa, Masaharu, Susaki, Wataru (2002) Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy. Japanese Journal of Applied Physics, 41. 496-500 doi:10.1143/jjap.41.496
In(2002) Japanese Journal of Applied Physics Vol. 41. Japan Society of Applied Physics

See Also

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Matsuura, Hideharu, Nishikawa, Kazuhiro, Segawa, Masaharu, Susaki, Wataru (2006) Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration. Japanese Journal of Applied Physics, 45 (8) 6373-6375 doi:10.1143/jjap.45.6373
Matsuura, Hideharu (1996) Evaluating Densities and Energy Levels of Impurities with Close Energy Levels in Semiconductor from Temperature Dependence of Majority-Carrier Concentration. Japanese Journal of Applied Physics, 35. 5680-5681 doi:10.1143/jjap.35.5680
Matsuura, Hideharu (1996) Evaluation of Densities and Energy Levels of Donors and Acceptors in Compensated Semiconductor from Temperature Dependence of Majority Carrier Concentration. Japanese Journal of Applied Physics, 35. 5297-5298 doi:10.1143/jjap.35.5297
Matsuura, Hideharu, Sonoi, Kazuhide (1996) A Simple Graphic Method for Evaluating Densities and Energy Levels of Impurities in Semiconductor from Temperature Dependence of Majority-Carrier Concentration. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l555
Matsuura, Hideharu (1997) A Simple Graphical Method for Determining Densities and Energy Levels of Donors and Acceptors in Semiconductor from Temperature Dependence of Majority Carrier Concentration. Japanese Journal of Applied Physics, 36. 3541-3547 doi:10.1143/jjap.36.3541
Matsuura, Hideharu, Segawa, Kazushige, Ebisui, Tatsuya (2000) Difference between Traps Determined from Transient Capacitance and Transient Reverse Current. Japanese Journal of Applied Physics, 39. 2714-2715 doi:10.1143/jjap.39.2714
Matsuura, Hideharu (1988) Density-of-State Distribution for Undoped a-Si:H and a-Si1-xGex:H Determined by Transient Heterojunction-Monitored Capacitance Method. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l516
Matsuura, Hideharu (1988) Density of Mid-Gap States for Undoped a-Si1-xGex:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l513
Matsuura, Hideharu, Segawa, Kazushige (2000) Investigation of Transient Reverse Currents in X-Ray Detector Pin Diodes by Discharge Current Transient Spectroscopy. Japanese Journal of Applied Physics, 39. 178-179 doi:10.1143/jjap.39.178
Matsuura, Hideharu (1999) An Improved Method for Determining Densities and Energy Levels of Dopants and Traps by Means of Hall-Effect Measurement. Japanese Journal of Applied Physics, 38. 5176-5177 doi:10.1143/jjap.38.5176
Matsuura, Hideharu, Sugiyama, Koichi, Nishikawa, Kazuhiro, Nagata, Takashi, Fukunaga, Nobuya (2003) Occupation probability for acceptor in Al-implantedp-type 4H–SiC. Journal of Applied Physics, 94 (4). 2234-2241 doi:10.1063/1.1589176
 
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