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Matsuura, Hideharu, Nishikawa, Kazuhiro, Segawa, Masaharu, Susaki, Wataru (2006) Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration. Japanese Journal of Applied Physics, 45 (8) 6373-6375 doi:10.1143/jjap.45.6373

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Reference TypeJournal (article/letter/editorial)
TitleAccurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration
JournalJapanese Journal of Applied Physics
AuthorsMatsuura, HideharuAuthor
Nishikawa, KazuhiroAuthor
Segawa, MasaharuAuthor
Susaki, WataruAuthor
Year2006 (August 4)Volume45
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.6373Search in ResearchGate
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Mindat Ref. ID15028577Long-form Identifiermindat:1:5:15028577:1
GUID0
Full ReferenceMatsuura, Hideharu, Nishikawa, Kazuhiro, Segawa, Masaharu, Susaki, Wataru (2006) Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration. Japanese Journal of Applied Physics, 45 (8) 6373-6375 doi:10.1143/jjap.45.6373
Plain TextMatsuura, Hideharu, Nishikawa, Kazuhiro, Segawa, Masaharu, Susaki, Wataru (2006) Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration. Japanese Journal of Applied Physics, 45 (8) 6373-6375 doi:10.1143/jjap.45.6373
In(2006, August) Japanese Journal of Applied Physics Vol. 45 (8) Japan Society of Applied Physics

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Matsuura, Hideharu, Morita, Kouhei, Nishikawa, Kazuhiro, Mizukoshi, Takeo, Segawa, Masaharu, Susaki, Wataru (2002) Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy. Japanese Journal of Applied Physics, 41. 496-500 doi:10.1143/jjap.41.496
Matsuura, Hideharu, Morizono, Tatsuya, Inoue, Yuuki, Kagamihara, Sou, Namba, Akihiko, Imai, Takahiro, Takebe, Toshihiko (2006) Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration. Japanese Journal of Applied Physics, 45 (8) 6376-6378 doi:10.1143/jjap.45.6376
Matsuura, Hideharu (1996) Evaluating Densities and Energy Levels of Impurities with Close Energy Levels in Semiconductor from Temperature Dependence of Majority-Carrier Concentration. Japanese Journal of Applied Physics, 35. 5680-5681 doi:10.1143/jjap.35.5680
Matsuura, Hideharu (1996) Evaluation of Densities and Energy Levels of Donors and Acceptors in Compensated Semiconductor from Temperature Dependence of Majority Carrier Concentration. Japanese Journal of Applied Physics, 35. 5297-5298 doi:10.1143/jjap.35.5297
Matsuura, Hideharu, Sonoi, Kazuhide (1996) A Simple Graphic Method for Evaluating Densities and Energy Levels of Impurities in Semiconductor from Temperature Dependence of Majority-Carrier Concentration. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l555
Matsuura, Hideharu (1997) A Simple Graphical Method for Determining Densities and Energy Levels of Donors and Acceptors in Semiconductor from Temperature Dependence of Majority Carrier Concentration. Japanese Journal of Applied Physics, 36. 3541-3547 doi:10.1143/jjap.36.3541
Susaki, Wataru (1967) Current Dependence of Junction Temperature in C-W Operated GaAs Laser Diodes. Japanese Journal of Applied Physics, 6 (8) 977-981 doi:10.1143/jjap.6.977
Kobayashi, Masaharu, Saitoh, Masumi, Hiramoto, Toshiro (2006) Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor. Japanese Journal of Applied Physics, 45 (8) 6157-6161 doi:10.1143/jjap.45.6157
Matsuura, Hideharu, Masuda, Yasuichi, Chen, Yi, Nishino, Shigehiro (2000) Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si2(CH3)6Using Hall-Effect Measurements. Japanese Journal of Applied Physics, 39. 5069-5075 doi:10.1143/jjap.39.5069
Matsuura, Hideharu, Komeda, Masahiko, Kagamihara, Sou, Iwata, Hirofumi, Ishihara, Ryohei, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kojima, Kazutoshi, Shinohe, Takashi, Arai, Kazuo (2004) Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers. Journal of Applied Physics, 96 (5). 2708-2715 doi:10.1063/1.1775298
Matsuura, Hideharu, Sugiyama, Koichi, Nishikawa, Kazuhiro, Nagata, Takashi, Fukunaga, Nobuya (2003) Occupation probability for acceptor in Al-implantedp-type 4H–SiC. Journal of Applied Physics, 94 (4). 2234-2241 doi:10.1063/1.1589176
 
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