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Bohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi (2002) Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2. Japanese Journal of Applied Physics, 41. 75-76 doi:10.1143/jjap.41.75

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Reference TypeJournal (article/letter/editorial)
TitleDistribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2
JournalJapanese Journal of Applied Physics
AuthorsBohyama, ShinyaAuthor
Yoshikawa, KenjiAuthor
Naoi, HiroyukiAuthor
Miyake, HidetoAuthor
Hiramatsu, KazumasaAuthor
Iyechika, YasushiAuthor
Maeda, TakayosiAuthor
Year2002 (January 15)Volume41
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.41.75Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15019076Long-form Identifiermindat:1:5:15019076:1
GUID0
Full ReferenceBohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi (2002) Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2. Japanese Journal of Applied Physics, 41. 75-76 doi:10.1143/jjap.41.75
Plain TextBohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi (2002) Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2. Japanese Journal of Applied Physics, 41. 75-76 doi:10.1143/jjap.41.75
In(2002) Japanese Journal of Applied Physics Vol. 41. Japan Society of Applied Physics

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