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Iyechika, Yasushi, Shimizu, Masaya, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa (2003) X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO) Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l732

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Reference TypeJournal (article/letter/editorial)
TitleX-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
JournalJapanese Journal of Applied Physics
AuthorsIyechika, YasushiAuthor
Shimizu, MasayaAuthor
Maeda, TakayoshiAuthor
Miyake, HidetoAuthor
Hiramatsu, KazumasaAuthor
Year2003 (July 1)Volume42
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.42.l732Search in ResearchGate
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Mindat Ref. ID15021702Long-form Identifiermindat:1:5:15021702:4
GUID0
Full ReferenceIyechika, Yasushi, Shimizu, Masaya, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa (2003) X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO) Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l732
Plain TextIyechika, Yasushi, Shimizu, Masaya, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa (2003) X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO) Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l732
In(2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics

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Honda, Yoshiaki, Iyechika, Yasushi, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa (2001) Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l309
Bohyama, Shinya, Miyake, Hideto, Hiramatsu, Kazumasa, Tsuchida, Yoshihiko, Maeda, Takayoshi (2005) Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets. Japanese Journal of Applied Physics, 44 (1) doi:10.1143/jjap.44.l24
Hiramatsu, Kazumasa, Nishiyama, Katsuya, Onishi, Masaru, Mizutani, Hiromitsu, Narukawa, Mitsuhisa, Motogaito, Atsushi, Miyake, Hideto, Iyechika, Yasushi, Maeda, Takayoshi (2000) Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO). Journal of Crystal Growth, 221 (1). 316-326 doi:10.1016/s0022-0248(00)00707-7
Honda, Yoshiaki, Iyechika, Yasushi, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa, Sone, Hiroki, Sawaki, Nobuhiko (1999) Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l1299
Sone, Hiroki, Nambu, Shingo, Kawaguchi, Yasutoshi, Yamaguchi, Masahito, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayoshi, Sawaki, Nobuhiko (1999) Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l356
Haino, Masahiro, Yamaguchi, Motoo, Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Iyechika, Yasushi, Maeda, Takayoshi (2000) Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l449
Bohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi (2002) Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2. Japanese Journal of Applied Physics, 41. 75-76 doi:10.1143/jjap.41.75
Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa (1999) Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l1000
Yamada, Yoichi, Yoshida, Yohei, Taguchi, Tsunemasa, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayoshi (2004) Time-resolved nonlinear luminescence of excitonic transitions in GaN. Journal of Applied Physics, 96 (1). 138-143 doi:10.1063/1.1755853
Kida, Yoshihiro, Shibata, Tomohiko, Miyake, Hideto, Hiramatsu, Kazumasa (2003) Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l572
Kobayashi, Kenji, Yamaguchi, A. Atsushi, Kimura, Shigeru, Sunakawa, Haruo, Kimura, Akitaka, Usui, Akira (1999) X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l611
 
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