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Urushido, Tatsuhiro, Yoshida, Harumasa, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l31

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma
JournalJapanese Journal of Applied Physics
AuthorsUrushido, TatsuhiroAuthor
Yoshida, HarumasaAuthor
Miyake, HidetoAuthor
Hiramatsu, KazumasaAuthor
Year2002 (January 15)Volume41
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.41.l31Search in ResearchGate
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Mindat Ref. ID15019382Long-form Identifiermindat:1:5:15019382:3
GUID0
Full ReferenceUrushido, Tatsuhiro, Yoshida, Harumasa, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l31
Plain TextUrushido, Tatsuhiro, Yoshida, Harumasa, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l31
In(2002) Japanese Journal of Applied Physics Vol. 41. Japan Society of Applied Physics

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Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramatsu, Kazumasa (2001) Formation of GaN Self-Organized Nanotips by Reactive Ion Etching. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l1301
Terada, Yuusuke, Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Field Emission from GaN Self-Organized Nanotips. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l1194
Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramatsu, Kazumasa (2001) In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l313
Yoshida, Harumasa, Terada, Yuusuke, Miyake, Hideto, Hiramatsu, Kazumasa (2002) Antireflection Effect of Self-Organized GaN Nanotip Structure from Ultraviolet to Visible Region. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l1134
Shimahara, Yuki, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyo, Fumitsugu, Okada, Tomoyuki, Takaoka, Hidetsugu, Yoshida, Harumasa (2011) Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (9) 95502 doi:10.1143/jjap.50.095502
Shimahara, Yuki, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyo, Fumitsugu, Okada, Tomoyuki, Takaoka, Hidetsugu, Yoshida, Harumasa (2011) Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (9) 95502 doi:10.7567/jjap.50.095502
Bohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi (2002) Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2. Japanese Journal of Applied Physics, 41. 75-76 doi:10.1143/jjap.41.75
Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa (1999) Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l1000
Shirakata, Sho, Miyake, Hideto (2002) Photoreflectance of CuAlxIn1-xSe2Alloys. Japanese Journal of Applied Physics, 41. 77-78 doi:10.1143/jjap.41.77
Song, In Jae, Lee, Seong Kuk, Lee, Kyoyeol, Park, Sung Soo, Han, Jae Yong (2002) Properties of Etched Ga- and N-Faces of Freestanding GaN Substrate Using Inductively Coupled Plasma-Reactive Ion Etching. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l317
Okada, Shunsuke, Iwai, Hiroki, Miyake, Hideto, Hiramatsu, Kazumasa (2017) Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns. Japanese Journal of Applied Physics, 56 (12) 125504 doi:10.7567/jjap.56.125504
 
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