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Kojima, Akira, Koshida, Nobuyoshi (2003) Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon. Japanese Journal of Applied Physics, 42. 2395-2398 doi:10.1143/jjap.42.2395

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon
JournalJapanese Journal of Applied Physics
AuthorsKojima, AkiraAuthor
Koshida, NobuyoshiAuthor
Year2003 (April 30)Volume42
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.42.2395Search in ResearchGate
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Mindat Ref. ID15020003Long-form Identifiermindat:1:5:15020003:3
GUID0
Full ReferenceKojima, Akira, Koshida, Nobuyoshi (2003) Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon. Japanese Journal of Applied Physics, 42. 2395-2398 doi:10.1143/jjap.42.2395
Plain TextKojima, Akira, Koshida, Nobuyoshi (2003) Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon. Japanese Journal of Applied Physics, 42. 2395-2398 doi:10.1143/jjap.42.2395
In(2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics

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Kojima, Akira, Koshida, Nobuyoshi (2001) Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements. Japanese Journal of Applied Physics, 40. 2779-2781 doi:10.1143/jjap.40.2779
Nakajima, Yoshiki, Toyama, Hajime, Uchida, Tetsuya, Kojima, Akira, Koshida, Nobuyoshi (2003) Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate. Japanese Journal of Applied Physics, 42. 2412-2414 doi:10.1143/jjap.42.2412
Gelloz, Bernard, Kanda, Takayuki, Uchida, Tetsuya, Niibe, Masao, Kojima, Akira, Koshida, Nobuyoshi (2005) Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes. Japanese Journal of Applied Physics, 44 (4) 2676-2679 doi:10.1143/jjap.44.2676
Nakajima, Yoshiki, Kojima, Akira, Toyama, Hajime, Koshida, Nobuyoshi (2002) A Solid-State Light-Emitting Device Based on Excitations of Ballistic Electrons Generated in Nanocrystalline Porous Polysilicon Films. Japanese Journal of Applied Physics, 41. 2707-2709 doi:10.1143/jjap.41.2707
Kojima, Akira, Koshida, Nobuyoshi (2005) Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer. Applied Physics Letters, 86 (2). 22102pp. doi:10.1063/1.1848181
Gelloz, Bernard, Sato, Masataka, Koshida, Nobuyoshi (2008) Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device. Japanese Journal of Applied Physics, 47 (4) 2902-2905 doi:10.1143/jjap.47.2902
Kiuchi, Akira, Koshida, Nobuyoshi (2005) New Operating Mode of Nanocrystalline Silicon Ultrasonic Emitters for Use as Audio Speakers. Japanese Journal of Applied Physics, 44 (4) 2634-2636 doi:10.1143/jjap.44.2634
Koshida, Nobuyoshi, Koyama, Hideki (1991) Efficient Visible Photoluminescence from Porous Silicon. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1221
Koshida, Nobuyoshi, Ozaki, Tsuyoshi, Sheng, Xia, Koyama, Hideki (1995) Cold Electron Emission from Electroluminescent Porous Silicon Diodes. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l705
Migita, Tatsuo, Shinoda, Hiroyuki, Koshida, Nobuyoshi (2002) Transient and Stationary Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon. Japanese Journal of Applied Physics, 41. 2588-2590 doi:10.1143/jjap.41.2588
Takahashi, Morio, Araki, Minoru, Koshida, Nobuyoshi (1998) Buried Optical Waveguides of Porous Silicon. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1017
 
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