| Reference Type | Journal (article/letter/editorial) |
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| Title | Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate |
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| Journal | Japanese Journal of Applied Physics |
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| Authors | Nakajima, Yoshiki | Author |
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| Toyama, Hajime | Author |
| Uchida, Tetsuya | Author |
| Kojima, Akira | Author |
| Koshida, Nobuyoshi | Author |
| Year | 2003 (April 30) | Volume | 42 |
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| Publisher | Japan Society of Applied Physics |
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| DOI | doi:10.1143/jjap.42.2412Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 15020007 | Long-form Identifier | mindat:1:5:15020007:1 |
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|
| GUID | 0 |
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| Full Reference | Nakajima, Yoshiki, Toyama, Hajime, Uchida, Tetsuya, Kojima, Akira, Koshida, Nobuyoshi (2003) Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate. Japanese Journal of Applied Physics, 42. 2412-2414 doi:10.1143/jjap.42.2412 |
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| Plain Text | Nakajima, Yoshiki, Toyama, Hajime, Uchida, Tetsuya, Kojima, Akira, Koshida, Nobuyoshi (2003) Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate. Japanese Journal of Applied Physics, 42. 2412-2414 doi:10.1143/jjap.42.2412 |
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| In | (2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics |
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