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Ikeda, Mitsuhisa, Shimizu, Yusuke, Murakami, Hideki, Miyazaki, Seiichi (2003) Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories. Japanese Journal of Applied Physics, 42. 4134-4137 doi:10.1143/jjap.42.4134

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Reference TypeJournal (article/letter/editorial)
TitleMultiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
JournalJapanese Journal of Applied Physics
AuthorsIkeda, MitsuhisaAuthor
Shimizu, YusukeAuthor
Murakami, HidekiAuthor
Miyazaki, SeiichiAuthor
Year2003 (June 30)Volume42
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.42.4134Search in ResearchGate
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Mindat Ref. ID15020425Long-form Identifiermindat:1:5:15020425:3
GUID0
Full ReferenceIkeda, Mitsuhisa, Shimizu, Yusuke, Murakami, Hideki, Miyazaki, Seiichi (2003) Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories. Japanese Journal of Applied Physics, 42. 4134-4137 doi:10.1143/jjap.42.4134
Plain TextIkeda, Mitsuhisa, Shimizu, Yusuke, Murakami, Hideki, Miyazaki, Seiichi (2003) Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories. Japanese Journal of Applied Physics, 42. 4134-4137 doi:10.1143/jjap.42.4134
In(2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics

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Kohno, Atsushi, Murakami, Hideki, Ikeda, Mitsuhisa, Miyazaki, Seiichi, Hirose, Masataka (2001) Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l721
Matsumoto, Ryuji, Ikeda, Mitsuhisa, Higashi, Seiichiro, Miyazaki, Seiichi (2008) Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases. Japanese Journal of Applied Physics, 47 (4) 3103-3106 doi:10.1143/jjap.47.3103
Shimizu, Naoji, Ikeda, Mitsuhisa, Yoshida, Eiji, Murakami, Hideki, Miyazaki, Seiichi, Hirose, Masataka (2000) Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique. Japanese Journal of Applied Physics, 39. 2318-2320 doi:10.1143/jjap.39.2318
Morisawa, Naoya, Ikeda, Mitsuhisa, Nakanishi, Sho, Kawanami, Akira, Makihara, Katsunori, Miyazaki, Seiichi (2010) Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dj04
Makihara, Katsunori, Deki, Hidenori, Ikeda, Mitsuhisa, Miyazaki, Seiichi (2012) Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dg08
Shiba, Kazutoshi, Nakagawa, Kazuyuki, Ikeda, Mitsuhisa, Kohno, Atsushi, Miyazaki, Seiichi, Hirose, Masataka (1997) Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l1279
Darma, Yudi, Murakami, Hideki, Miyazaki, Seiichi (2003) Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics, 42. 4129-4133 doi:10.1143/jjap.42.4129
Ou, Xiaobin, Wu, Nan-Jian (2004) Single-Electron Multiple-Valued Memory Using Ultra-Small Floating Gate Metal-Oxide-Semiconductor Field Effect Transistor. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l1359
Makihara, Katsunori, Deki, Hidenori, Ikeda, Mitsuhisa, Miyazaki, Seiichi (2012) Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg08
Itokawa, Hiroshi, Ohta, Akio, Ikeda, Mitsuhisa, Mizushima, Ichiro, Miyazaki, Seiichi (2010) Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon. Japanese Journal of Applied Physics, 49 (8) 81301 doi:10.1143/jjap.49.081301
Makihara, Katsunori, Shimanoe, Kazuhiro, Ikeda, Mitsuhisa, Higashi, Seiichiro, Miyazaki, Seiichi (2008) Self-Assembling Formation of Ni Nanodots on SiO2Induced by Remote H2Plasma Treatment and Their Electrical Charging Characteristics. Japanese Journal of Applied Physics, 47 (4) 3099-3102 doi:10.1143/jjap.47.3099
 
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