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Morisawa, Naoya, Ikeda, Mitsuhisa, Nakanishi, Sho, Kawanami, Akira, Makihara, Katsunori, Miyazaki, Seiichi (2010) Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dj04

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Reference TypeJournal (article/letter/editorial)
TitleLight-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures
JournalJapanese Journal of Applied Physics
AuthorsMorisawa, NaoyaAuthor
Ikeda, MitsuhisaAuthor
Nakanishi, ShoAuthor
Kawanami, AkiraAuthor
Makihara, KatsunoriAuthor
Miyazaki, SeiichiAuthor
Year2010 (April 20)Volume49
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.49.04dj04Search in ResearchGate
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Mindat Ref. ID15035344Long-form Identifiermindat:1:5:15035344:9
GUID0
Full ReferenceMorisawa, Naoya, Ikeda, Mitsuhisa, Nakanishi, Sho, Kawanami, Akira, Makihara, Katsunori, Miyazaki, Seiichi (2010) Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dj04
Plain TextMorisawa, Naoya, Ikeda, Mitsuhisa, Nakanishi, Sho, Kawanami, Akira, Makihara, Katsunori, Miyazaki, Seiichi (2010) Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dj04
In(2010, April) Japanese Journal of Applied Physics Vol. 49 (4) Japan Society of Applied Physics

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Morisawa, Naoya, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi (2011) Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures. Key Engineering Materials, 470. 135-139 doi:10.4028/www.scientific.net/kem.470.135
Kawanami, Akira, Makihara, Katsunori, Ikeda, Mitsuhisa, Miyazaki, Seiichi (2010) Formation of Cobalt and Cobalt-Silicide Nanodots on Ultrathin SiO2Induced by Remote Hydrogen Plasma. Japanese Journal of Applied Physics, 49 (8) 8 doi:10.1143/jjap.49.08ja04
Makihara, Katsunori, Matsumoto, Kazuya, Yamane, Masato, Okada, Tatsuya, Morisawa, Naoya, Ikeda, Mitsuhisa, Higashi, Seiichiro, Miyazaki, Seiichi (2011) Formation of High-Density Pt Nanodots on SiO$_{2}$ Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.1143/jjap.50.08ke06
Makihara, Katsunori, Deki, Hidenori, Ikeda, Mitsuhisa, Miyazaki, Seiichi (2012) Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dg08
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Ikeda, Mitsuhisa, Shimizu, Yusuke, Murakami, Hideki, Miyazaki, Seiichi (2003) Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories. Japanese Journal of Applied Physics, 42. 4134-4137 doi:10.1143/jjap.42.4134
Makihara, Katsunori, Deki, Hidenori, Ikeda, Mitsuhisa, Miyazaki, Seiichi (2012) Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dg08
Kohno, Atsushi, Murakami, Hideki, Ikeda, Mitsuhisa, Miyazaki, Seiichi, Hirose, Masataka (2001) Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l721
Makihara, Katsunori, Shimanoe, Kazuhiro, Ikeda, Mitsuhisa, Higashi, Seiichiro, Miyazaki, Seiichi (2008) Self-Assembling Formation of Ni Nanodots on SiO2Induced by Remote H2Plasma Treatment and Their Electrical Charging Characteristics. Japanese Journal of Applied Physics, 47 (4) 3099-3102 doi:10.1143/jjap.47.3099
Matsumoto, Ryuji, Ikeda, Mitsuhisa, Higashi, Seiichiro, Miyazaki, Seiichi (2008) Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases. Japanese Journal of Applied Physics, 47 (4) 3103-3106 doi:10.1143/jjap.47.3103
Fujimura, Nobuyuki, Ohta, Akio, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi (2017) Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2interfaces. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04cb04
 
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