Lee, Sungjoo, Kwong, Dim-Lee (2003) Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics. Japanese Journal of Applied Physics, 42. 7256-7258 doi:10.1143/jjap.42.7256
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Lee, Sungjoo | Author | |
| Kwong, Dim-Lee | Author | ||
| Year | 2003 (December 10) | Volume | 42 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.42.7256Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15021164 | Long-form Identifier | mindat:1:5:15021164:0 |
| GUID | 0 | ||
| Full Reference | Lee, Sungjoo, Kwong, Dim-Lee (2003) Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics. Japanese Journal of Applied Physics, 42. 7256-7258 doi:10.1143/jjap.42.7256 | ||
| Plain Text | Lee, Sungjoo, Kwong, Dim-Lee (2003) Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics. Japanese Journal of Applied Physics, 42. 7256-7258 doi:10.1143/jjap.42.7256 | ||
| In | (2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics | ||
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