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Li, Rui, Lee, Sung-Joo, Hong, Ming-Hui, Chi, Dong-Zhi, Kwong, Dim-Lee (2008) Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack. Japanese Journal of Applied Physics, 47 (4) 2548-2550 doi:10.1143/jjap.47.2548

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Reference TypeJournal (article/letter/editorial)
TitlePt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack
JournalJapanese Journal of Applied Physics
AuthorsLi, RuiAuthor
Lee, Sung-JooAuthor
Hong, Ming-HuiAuthor
Chi, Dong-ZhiAuthor
Kwong, Dim-LeeAuthor
Year2008 (April 25)Volume47
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.47.2548Search in ResearchGate
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Mindat Ref. ID15031753Long-form Identifiermindat:1:5:15031753:3
GUID0
Full ReferenceLi, Rui, Lee, Sung-Joo, Hong, Ming-Hui, Chi, Dong-Zhi, Kwong, Dim-Lee (2008) Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack. Japanese Journal of Applied Physics, 47 (4) 2548-2550 doi:10.1143/jjap.47.2548
Plain TextLi, Rui, Lee, Sung-Joo, Hong, Ming-Hui, Chi, Dong-Zhi, Kwong, Dim-Lee (2008) Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack. Japanese Journal of Applied Physics, 47 (4) 2548-2550 doi:10.1143/jjap.47.2548
In(2008, April) Japanese Journal of Applied Physics Vol. 47 (4) Japan Society of Applied Physics

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Lee, Sungjoo, Kwong, Dim-Lee (2003) Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics. Japanese Journal of Applied Physics, 42. 7256-7258 doi:10.1143/jjap.42.7256
Tanabe, Ryo, Suzuki, Kunihiro (2008) Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor. Japanese Journal of Applied Physics, 47 (11) 8311-8316 doi:10.1143/jjap.47.8311
Ahn, Jinho, Kwong, Dim-Lee (1997) Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides. Japanese Journal of Applied Physics, 36. 4225-4229 doi:10.1143/jjap.36.4225
Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Chi, Dong-Zhi, Lo, Guo-Qiang, Lee, Pooi See, Hoe, Keat-Mun, Chin, Yoke King, Cui, Guang Da (2008) Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47 (4) 3277-3281 doi:10.1143/jjap.47.3277
Lee, Heon-Bok, Ahn, Shi-Hyun, Lee, Jung-Hee, Hahm, Sung-Ho (2009) Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c032
Saitoh, Wataru, Yamagami, Shigeharu, Itoh, Atsushi, Asada, Masahiro (1999) 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l629
Li, Yiming, Yu, Shao-Ming, Lee, Jam-Wem (2005) Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current. Japanese Journal of Applied Physics, 44 (4) 2132-2136 doi:10.1143/jjap.44.2132
Lee, Sungjoo, Kwong, Dim-Lee (2004) Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric. Japanese Journal of Applied Physics, 43 (2) 427-431 doi:10.1143/jjap.43.427
Lee, Heon-Bok, Cho, Hyun-Ick, An, Hyun-Su, Lee, Jung-Hee, Hahm, Sung-Ho (2007) Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain. Japanese Journal of Applied Physics, 46 (4) 2348-2351 doi:10.1143/jjap.46.2348
Itoh, Atsushi, Saitoh, Masayuki, Asada, Masahiro (2000) A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate. Japanese Journal of Applied Physics, 39. 4757-4758 doi:10.1143/jjap.39.4757
Lee, DongHun, Imajo, Hideto, Kanashima, Takeshi, Okuyama, Masanori (2011) Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04da11
 
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