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Kakimoto, Shouichi (2004) Temperature Dependence of Threshold Currents of 1.55 µm p-Substrate Buried Crescent Laser Diodes. Japanese Journal of Applied Physics, 43 (9) 6079-6083 doi:10.1143/jjap.43.6079

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Reference TypeJournal (article/letter/editorial)
TitleTemperature Dependence of Threshold Currents of 1.55 µm p-Substrate Buried Crescent Laser Diodes
JournalJapanese Journal of Applied Physics
AuthorsKakimoto, ShouichiAuthor
Year2004 (September 9)Volume43
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.43.6079Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15023942Long-form Identifiermindat:1:5:15023942:2
GUID0
Full ReferenceKakimoto, Shouichi (2004) Temperature Dependence of Threshold Currents of 1.55 µm p-Substrate Buried Crescent Laser Diodes. Japanese Journal of Applied Physics, 43 (9) 6079-6083 doi:10.1143/jjap.43.6079
Plain TextKakimoto, Shouichi (2004) Temperature Dependence of Threshold Currents of 1.55 µm p-Substrate Buried Crescent Laser Diodes. Japanese Journal of Applied Physics, 43 (9) 6079-6083 doi:10.1143/jjap.43.6079
In(2004, September) Japanese Journal of Applied Physics Vol. 43 (9) Japan Society of Applied Physics

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Kakimoto, Syoichi, Takagi, Kazuhisa, Watanabe, Hitoshi, Higuchi, Hideo (1998) Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes. Journal of Applied Physics, 84 (4). 1820-1824 doi:10.1063/1.368339
Jovanović, Vladimir D., Ikonić, Zoran, Indjin, Dragan, Harrison, Paul, Soref, Richard A. (2004) Designs for λ=1.55 µm GaN-Based Intersubband Laser Active Region. Japanese Journal of Applied Physics, 43 (11) 7444-7447 doi:10.1143/jjap.43.7444
Hao, Zhi-Biao, Ren, Zai-Yuan, He, Wei, Luo, Yi (2002) 1.55 µm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 41. 754-757 doi:10.1143/jjap.41.754
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Baba, Toshihiko, Matsuoka, Kazuyoshi, Koyama, Fumio, Iga, Kenichi (1993) A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser. Japanese Journal of Applied Physics, 32. 1126-1127 doi:10.1143/jjap.32.1126
Takemoto, Kazuya, Sakuma, Yoshiki, Hirose, Shinichi, Usuki, Tatsuya, Yokoyama, Naoki (2004) Observation of Exciton Transition in 1.3-1.55 µm Band from Single InAs/InP Quantum Dots in Mesa Structure. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l349
 
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