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Kakimoto, Syoichi, Takagi, Kazuhisa, Watanabe, Hitoshi, Higuchi, Hideo (1998) Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes. Journal of Applied Physics, 84 (4). 1820-1824 doi:10.1063/1.368339

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Reference TypeJournal (article/letter/editorial)
TitleThreshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes
JournalJournal of Applied Physics
AuthorsKakimoto, SyoichiAuthor
Takagi, KazuhisaAuthor
Watanabe, HitoshiAuthor
Higuchi, HideoAuthor
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368339Search in ResearchGate
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Mindat Ref. ID5093170Long-form Identifiermindat:1:5:5093170:9
GUID0
Full ReferenceKakimoto, Syoichi, Takagi, Kazuhisa, Watanabe, Hitoshi, Higuchi, Hideo (1998) Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes. Journal of Applied Physics, 84 (4). 1820-1824 doi:10.1063/1.368339
Plain TextKakimoto, Syoichi, Takagi, Kazuhisa, Watanabe, Hitoshi, Higuchi, Hideo (1998) Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes. Journal of Applied Physics, 84 (4). 1820-1824 doi:10.1063/1.368339
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Kakimoto, Syouichi (2002) Intervalence band absorption loss coefficients of the active layer for InGaAs/InGaAsP multiple quantum well laser diodes. Journal of Applied Physics, 92 (11). 6403-6407 doi:10.1063/1.1521260
Kakimoto, Syoichi, Watanabe, Hitoshi (1999) Intervalence band absorption in InP. Journal of Applied Physics, 85 (3). 1822-1824 doi:10.1063/1.369329
Zhang, J.-Z., Galbraith, I. (2004) Rabi oscillations of ultrashort optical pulses in 1.55 μm InGaAs/InGaAsP quantum-well amplifiers. Journal of Applied Physics, 96 (1). 922-924 doi:10.1063/1.1756686
Choudhury, N., Dutta, N. K. (2001) Modulation doped InGaAsP quantum well laser emitting at 1.55 μm. Journal of Applied Physics, 90 (1). 38-42 doi:10.1063/1.1376403
De Matos, C., Le Corre, A., L’Haridon, H., Gosselin, S., Lambert, B. (1997) Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm. Applied Physics Letters, 70 (26). 3591-3593 doi:10.1063/1.119242
Takiguchi, Tohru, Watanabe, Hitoshi, Shibata, Kimitaka, Takagi, Kazuhisa, Minami, Hiroyuki, Takemoto, Akira, Mihashi, Yutaka, Higuchi, Hideo (1999) Selective-Area Growth for Novel 1.3 µm Distributed Feedback Laser Diodes with Graded Grating. Japanese Journal of Applied Physics, 38. 1249-1251 doi:10.1143/jjap.38.1249
Kakimoto, Shouichi (2004) Temperature Dependence of Threshold Currents of 1.55 µm p-Substrate Buried Crescent Laser Diodes. Japanese Journal of Applied Physics, 43 (9) 6079-6083 doi:10.1143/jjap.43.6079
Yamada, Takeshi, Iga, Ryuzo, Noguchi, Yoshio, Sugiura, Hideo (1991) Low-Threshold InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1741
Seki, Shunji, Yamanaka, Takayuki, Lui, Wayne, Yokoyama, Kiyoyuki (1994) Theoretical analysis of differential gain of 1.55 μm InGaAsP/InP compressive‐strained multiple‐quantum‐well lasers. Journal of Applied Physics, 75 (3). 1299-1303 doi:10.1063/1.356407
Jambunathan, R., Singh, J. (1996) Effects of non‐uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP‐based multiple quantum well laser. Journal of Applied Physics, 80 (12). 6875-6879 doi:10.1063/1.363756
Tsang, W. T., Wu, M. C., Tanbun‐Ek, T., Logan, R. A., Chu, S. N. G., Sergent, A. M. (1990) Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy. Applied Physics Letters, 57 (20). 2065-2067 doi:10.1063/1.103942
 
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