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(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year1998 (August)Volume84
Issue<   4   >
PublisherAIP Publishing
Mindat Ref. ID5093026Long-form Identifiermindat:1:5:5093026:9
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Full Reference(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing
Plain Text(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing
In(1998) Journal of Applied Physics Vol. 84. AIP Publishing

Contains

Gustafsson, Anders, Pistol, Mats-Erik, Montelius, Lars, Samuelson, Lars (1998) Local probe techniques for luminescence studies of low-dimensional semiconductor structures. Journal of Applied Physics, 84 (4). 1715-1775 doi:10.1063/1.368613
Fontaine, P. A., Dubois, E., Stiévenard, D. (1998) Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon. Journal of Applied Physics, 84 (4). 1776-1781 doi:10.1063/1.368334
Kirstein, Stefan, Mertesdorf, Michael, Schönhoff, Monika (1998) The influence of a viscous fluid on the vibration dynamics of scanning near-field optical microscopy fiber probes and atomic force microscopy cantilevers. Journal of Applied Physics, 84 (4). 1782-1790 doi:10.1063/1.368335
Chen, Jincan, Yan, Zijun (1998) The effect of thermal resistances and regenerative losses on the performance characteristics of a magnetic Ericsson refrigeration cycle. Journal of Applied Physics, 84 (4). 1791-1795 doi:10.1063/1.368349
Nurmela, A., Zazubovich, V., RÀisÀnen, J., Rauhala, E., Lappalainen, R. (1998) Elastic scattering cross sections of protons by copper, molybdenum, silver and tin near the Coulomb barrier. Journal of Applied Physics, 84 (4). 1796-1799 doi:10.1063/1.368350
Naftaly, Mira, Jha, Animesh, Jordan, Wayne G. (1998) 1.3 ÎŒm Fluorescence quenching in Pr-doped glasses. Journal of Applied Physics, 84 (4). 1800-1804 doi:10.1063/1.368336
Thiyagarajan, S. M. K., Kanjamala, A. P., Levi, A. F. J. (1998) Wavelength switching in multi-cavity laser diodes. Journal of Applied Physics, 84 (4). 1805-1812 doi:10.1063/1.368337
Yeo, Y. C., Chong, T. C., Li, M. F., Fan, W. J. (1998) Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers. Journal of Applied Physics, 84 (4). 1813-1819 doi:10.1063/1.368338
Kakimoto, Syoichi, Takagi, Kazuhisa, Watanabe, Hitoshi, Higuchi, Hideo (1998) Threshold currents of 1.55 ÎŒm InGaAs/InGaAsP multiple quantum well laser diodes. Journal of Applied Physics, 84 (4). 1820-1824 doi:10.1063/1.368339
Chang, Springfield, Hsu, Chia-Chen, Huang, Tzer-Hsiang, Lin, Sen-Wei, Leaung, Chung-Yi, Liu, Tsai-Tien (1998) Heterodyne interferometric measurement of the thermo-optic coefficients of potassium niobate. Journal of Applied Physics, 84 (4). 1825-1829 doi:10.1063/1.368340
Bloom, D., McKeever, S. W. S. (1998) Temperature dependence of the photorefractive effect in Bi12GeO20. Journal of Applied Physics, 84 (4). 1830-1833 doi:10.1063/1.368341
da Silva, M. G., Teles, A. F., Sombra, A. S. B. (1998) Soliton switching in three-core nonlinear directional fiber couplers. Journal of Applied Physics, 84 (4). 1834-1842 doi:10.1063/1.368615
Vainshtein, S. N., Kostamovaara, J. T. (1998) Spectral filtering for time isolation of intensive picosecond optical pulses from a Q-switched laser diode. Journal of Applied Physics, 84 (4). 1843-1847 doi:10.1063/1.368342
Yang, Jing, Ventzek, Peter L. G., Sakai, Y., Date, H., Kitamori, K., Tagashira, H., Meyyappan, M. (1998) Simulations of step responses of electronegative radio-frequency capacitively coupled discharges. Journal of Applied Physics, 84 (4). 1848-1858 doi:10.1063/1.368343
Liu, A. G., Wang, X. F., Tang, B. Y., Chu, P. K. (1998) Dose and energy uniformity over inner surface in plasma immersion ion implantation. Journal of Applied Physics, 84 (4). 1859-1862 doi:10.1063/1.368344
Kochetov, I. V., Napartovich, A. P., Ye, C., Lo, D. (1998) Negative differential conductivity of electrons in electron-beam sustained discharge in pure xenon. Journal of Applied Physics, 84 (4). 1863-1869 doi:10.1063/1.368345
Barrat, S., Saada, S., Dieguez, I., Bauer-Grosse, E. (1998) Diamond deposition by chemical vapor deposition process: Study of the bias enhanced nucleation step. Journal of Applied Physics, 84 (4). 1870-1880 doi:10.1063/1.368314
de Bernabé, A., Capitån, M. J., Fischer, H. E., Prieto, C. (1998) Study of interfaces in Co/Cu multilayers by low-angle anomalous x-ray diffraction. Journal of Applied Physics, 84 (4). 1881-1888 doi:10.1063/1.368315
Fung, S., Shan, Y. Y., Deng, A. H., Ling, C. C., Beling, C. D., Lynn, K. G. (1998) Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation. Journal of Applied Physics, 84 (4). 1889-1892 doi:10.1063/1.368316
Grandjean, F., Ezekwenna, P. C., Long, Gary J., Pringle, O. A., l’HĂ©ritier, Ph., Ellouze, M., Luo, H. P., Yelon, W. B. (1998) Neutron diffraction and Mössbauer spectral study of Nd2Fe16Ti and its nitride. Journal of Applied Physics, 84 (4). 1893-1900 doi:10.1063/1.368317
Giri, P. K., Mohapatra, Y. N. (1998) Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering. Journal of Applied Physics, 84 (4). 1901-1912 doi:10.1063/1.368351
Liu, Zhengxin, Li, Hao, Feng, Xiaodong, Ren, Shuguang, Wang, Honghong, Liu, Zhenghui, Lu, Baofu (1998) Formation effects and optical absorption of Ag nanocrystals embedded in single crystal SiO2 by implantation. Journal of Applied Physics, 84 (4). 1913-1917 doi:10.1063/1.368318
Zhang, X. Y., Zhang, F. X., Zhang, J. W., Yu, W., Zhang, M., Zhao, J. H., Liu, R. P., Xu, Y. F., Wang, W. K. (1998) Influence of pressures on the crystallization process of an amorphous Fe73.5Cu1Nb3Si13.5B9 alloy. Journal of Applied Physics, 84 (4). 1918-1923 doi:10.1063/1.368319
Zhang, K., Alexandrov, I. V., Valiev, R. Z., Lu, K. (1998) The thermal behavior of atoms in ultrafine-grained Ni processed by severe plastic deformation. Journal of Applied Physics, 84 (4). 1924-1927 doi:10.1063/1.368320
Katz, J. I. (1998) Statistics and microphysics of the fracture of glass. Journal of Applied Physics, 84 (4). 1928-1931 doi:10.1063/1.368321
de Rességuier, T., Hallouin, M. (1998) Stress relaxation and precursor decay in laser shock-loaded iron. Journal of Applied Physics, 84 (4). 1932-1938 doi:10.1063/1.368322
Yao, Nan, Lordi, Vincenzo (1998) Young’s modulus of single-walled carbon nanotubes. Journal of Applied Physics, 84 (4). 1939-1943 doi:10.1063/1.368323
Tachibana, M., Kojima, K., Sakuma, H., Komatsu, T., Sunakawa, T. (1998) Wavelength dependence of the photoinduced indentation hardening in C60 crystals. Journal of Applied Physics, 84 (4). 1944-1946 doi:10.1063/1.368324
Hyun, Jin-Kee, Sharma, Surinder M., Gupta, Y. M. (1998) Ruby R-line shifts for shock compression along (11̄02). Journal of Applied Physics, 84 (4). 1947-1952 doi:10.1063/1.368325
Santamaria, C., Quartu, R., Diep, H. T. (1998) Frustration effect in a quantum Heisenberg spin system. Journal of Applied Physics, 84 (4). 1953-1957 doi:10.1063/1.368326
Dekker, J. P., Lodder, A. (1998) Calculated electromigration wind force in face-centered-cubic and body-centered-cubic metals. Journal of Applied Physics, 84 (4). 1958-1962 doi:10.1063/1.368327
Johnson, M. D., Caturla, M.-J., Díaz de la Rubia, T. (1998) A kinetic Monte–Carlo study of the effective diffusivity of the silicon self-interstitial in the presence of carbon and boron. Journal of Applied Physics, 84 (4). 1963-1967 doi:10.1063/1.368328
Girginoudi, S., Girginoudi, D., Thanailakis, A., Georgoulas, N., Papaioannou, V. (1998) Electrical and structural properties of poly-Si films grown by furnace and rapid thermal annealing of amorphous Si. Journal of Applied Physics, 84 (4). 1968-1972 doi:10.1063/1.368352
Auret, F. D., Meyer, W. E., Deenapanray, P. N. K., Goodman, S. A., Myburg, G., Murtagh, M., Ye, Shu-Ren, Crean, G. M. (1998) Electrical characterization of He-plasma processed n-GaAs. Journal of Applied Physics, 84 (4). 1973-1976 doi:10.1063/1.368329
Li, Zhi-Qiang, Chen, Hao, Kong, Fan-Quan, Sun, Qiang, Kawazoe, Yoshiyuki (1998) Relaxations of nonpolar zinc blende (110) surface of GaN, AlN, and BN. Journal of Applied Physics, 84 (4). 1977-1980 doi:10.1063/1.368330
Zhou, D., Gruen, D. M., Qin, L. C., McCauley, T. G., Krauss, A. R. (1998) Control of diamond film microstructure by Ar additions to CH4/H2 microwave plasmas. Journal of Applied Physics, 84 (4). 1981-1989 doi:10.1063/1.368331
Almeida, J., Berger, H., Margaritondo, G. (1998) Schottky barrier and interface formation of metal–GaTe(001) interfaces. Journal of Applied Physics, 84 (4). 1990-1993 doi:10.1063/1.368332
Wang, Rong-ping, Zhou, Yue-liang, Pan, Shao-hua, Zhang, Hao, Guo, Xiang-xin, Xiong, Xu-ming, Lu, Hui-bin, Zhen, Zheng-hao, Yang, Guo-zhen (1998) Structural characteristics of CeO2 films grown on biaxially textured nickel (001). Journal of Applied Physics, 84 (4). 1994-1997 doi:10.1063/1.368333
Koleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., Gorman, R. J. (1998) Growth model for GaN with comparison to structural, optical, and electrical properties. Journal of Applied Physics, 84 (4). 1998-2010 doi:10.1063/1.368353
Yang, B.-K., Krishnamurthy, M., Weber, W. H. (1998) Low-temperature epitaxial growth of Ge-rich Ge–Si–C alloys: Microstructure, Raman studies, and optical properties. Journal of Applied Physics, 84 (4). 2011-2017 doi:10.1063/1.368354
Pavlović, M., Desnica, U. V. (1998) Precise determination of deep trap signatures and their relative and absolute concentrations in semi-insulating GaAs. Journal of Applied Physics, 84 (4). 2018-2024 doi:10.1063/1.368258
De, Molly, Sinharoy, P. K., De, S. K. (1998) Optical properties of PrAg under pressure. Journal of Applied Physics, 84 (4). 2025-2029 doi:10.1063/1.368259
Radue, C., Conibear, A. B., Ball, C. A. B. (1998) Reactivation kinetics of the Cu and Fe hole traps in hydrogenated p-type GaAs. Journal of Applied Physics, 84 (4). 2030-2033 doi:10.1063/1.368260
Hauke, M., Jakumeit, J., Krafft, B., Nimtz, G., Förster, A., LĂŒth, H. (1998) DX centers in Al0.3Ga0.7As/GaAs analyzed by point contact measurements. Journal of Applied Physics, 84 (4). 2034-2039 doi:10.1063/1.368261
Krtschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D. (1998) Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy. Journal of Applied Physics, 84 (4). 2040-2043 doi:10.1063/1.368262
Yang, Rong, Zhang, Wei, Song, W. J. (1998) Theory of giant magnetoresistance of magnetic granular films. Journal of Applied Physics, 84 (4). 2044-2047 doi:10.1063/1.368263
Raychaudhuri, P., Nath, T. K., Nigam, A. K., Pinto, R. (1998) A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: The role of spin polarized tunneling at the grain boundaries. Journal of Applied Physics, 84 (4). 2048-2052 doi:10.1063/1.368264
KaĆŸukauskas, V. (1998) Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs. Journal of Applied Physics, 84 (4). 2053-2061 doi:10.1063/1.368265
Rutsch, G., Devaty, R. P., Choyke, W. J., Langer, D. W., Rowland, L. B. (1998) Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T. Journal of Applied Physics, 84 (4). 2062-2064 doi:10.1063/1.368266
Huang, Mingwei, Goldsman, Neil, Chang, Chien-Hwa, Mayergoyz, Isaak, McGarrity, James M., Woolard, Dwight (1998) Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics. Journal of Applied Physics, 84 (4). 2065-2070 doi:10.1063/1.368267
Schwan, J., Batori, V., Ulrich, S., Ehrhardt, H., Silva, S. R. P. (1998) Nitrogen doping of amorphous carbon thin films. Journal of Applied Physics, 84 (4). 2071-2081 doi:10.1063/1.368268
Kang, T. W., Park, S. H., Song, H., Kim, T. W., Yoon, G. S., Kim, C. O. (1998) Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates. Journal of Applied Physics, 84 (4). 2082-2085 doi:10.1063/1.368269
King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., Nemanich, R. J. (1998) Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. Journal of Applied Physics, 84 (4). 2086-2090 doi:10.1063/1.368355
Trivedi, Malay, Shenai, Krishna (1998) Current snap-back and negative differential resistance in layered PnÎœN structures. Journal of Applied Physics, 84 (4). 2091-2098 doi:10.1063/1.368356
Yu, L. S., Liu, Q. Z., Xing, Q. J., Qiao, D. J., Lau, S. S., Redwing, J. (1998) The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes. Journal of Applied Physics, 84 (4). 2099-2104 doi:10.1063/1.368270
Yang, Jie, Shen, Jun (1998) Doping effects in organic electroluminescent devices. Journal of Applied Physics, 84 (4). 2105-2111 doi:10.1063/1.368271
Ramvall, P., Carlsson, N., Omling, P., Samuelson, L., Seifert, W., Wang, Q., Ishibashi, K., Aoyagi, Y. (1998) Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells. Journal of Applied Physics, 84 (4). 2112-2122 doi:10.1063/1.368272
Adachi, Yuji, Kohiki, Shigemi, Wagatsuma, Kazuaki, Oku, Masaoki (1998) Intrinsic and extrinsic surface states of single crystalline SrTiO3. Journal of Applied Physics, 84 (4). 2123-2126 doi:10.1063/1.368273
Dehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs. Journal of Applied Physics, 84 (4). 2127-2132 doi:10.1063/1.368357
Lu, Y. F., Ren, Z. M., Song, W. D., Chan, D. S. H. (1998) Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment. Journal of Applied Physics, 84 (4). 2133-2137 doi:10.1063/1.368274
Vignaud, D., Wallart, X., Mollot, F., Sermage, B. (1998) Photoluminescence study of the interface in type II InAlAs–InP heterostructures. Journal of Applied Physics, 84 (4). 2138-2145 doi:10.1063/1.368275
Sheng, Weidong, Xu, Hongqi (1998) Transport characteristics of a window-coupled quantum-wire system in nonuniform magnetic fields. Journal of Applied Physics, 84 (4). 2146-2154 doi:10.1063/1.368276
Teng, H. B., Sun, J. P., Haddad, G. I., Stroscio, Michael A., Yu, SeGi, Kim, K. W. (1998) Phonon assisted intersubband transitions in step quantum well structures. Journal of Applied Physics, 84 (4). 2155-2164 doi:10.1063/1.368277
Wu, Liqing, Huang, Meichun, Zhu, Zizhong, Li, Kaihang (1998) Band gap and heterojunction discontinuities of pseudomorphic Si1−x−yGexCy alloy layers on Si(001). Journal of Applied Physics, 84 (4). 2165-2169 doi:10.1063/1.368278
Watanabe, K., Hartmann, A. J., Lamb, R. N., Scott, J. F. (1998) Electronic characteristics of the SrBi2Ta2O9–Pt junction. Journal of Applied Physics, 84 (4). 2170-2175 doi:10.1063/1.368279
Yoshitake, T., Hattori, W., Tahara, S. (1998) Effects of copper deficiency on the structure and microwave properties of YBa2Cu3O7−ή films deposited by laser ablation. Journal of Applied Physics, 84 (4). 2176-2180 doi:10.1063/1.368280
Cheggour, N., Decroux, M., Fischer, O/., Hampshire, D. P. (1998) Irreversibility line and granularity in Chevrel phase superconducting wires. Journal of Applied Physics, 84 (4). 2181-2183 doi:10.1063/1.368358
Chen, Chen, Kitakami, Osamu, Shimada, Yutaka (1998) Particle size effects and surface anisotropy in Fe-based granular films. Journal of Applied Physics, 84 (4). 2184-2188 doi:10.1063/1.368281
Del Bianco, L., Hernando, A., Multigner, M., Prados, C., Sánchez-López, J. C., Fernández, A., Conde, C. F., Conde, A. (1998) Evidence of spin disorder at the surface–core interface of oxygen passivated Fe nanoparticles. Journal of Applied Physics, 84 (4). 2189-2192 doi:10.1063/1.368282
Kamigaki, Yoshiaki, Miyazaki, Takao, Yoshihiro, Naotsugu, Watanabe, Kikuo, Yokogawa, Ken’etsu (1998) Two signals in electrically detected magnetic resonance of platinum-doped silicon p–n junctions. Journal of Applied Physics, 84 (4). 2193-2198 doi:10.1063/1.368359
Yamada, Masahiro, Saitoh, Masaki (1998) Fabrication of a periodically poled laminar domain structure with a pitch of a few micrometers by applying an external electric field. Journal of Applied Physics, 84 (4). 2199-2206 doi:10.1063/1.368283
Correia, M. R., Monteiro, T., Pereira, E., Costa, L. C. (1998) Distribution of 1.68 eV emission from diamond films. Journal of Applied Physics, 84 (4). 2207-2211 doi:10.1063/1.368284
Cameron, T. P., Hunt, W. D. (1998) Reflection characteristics of obliquely incident surface acoustic waves from groove and aluminum gratings on {100}-cut gallium arsenide. Journal of Applied Physics, 84 (4). 2212-2218 doi:10.1063/1.368285
Rojas-LĂłpez, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., Greene, J. E. (1998) Raman scattering from fully strained Ge1−xSnx (xâ©œ0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84 (4). 2219-2223 doi:10.1063/1.368286
Tajima, Michio, Ibuka, Shigeo (1998) Luminescence due to electron-hole condensation in silicon-on-insulator. Journal of Applied Physics, 84 (4). 2224-2228 doi:10.1063/1.368287
Krystek, Wojciech, Leibovitch, M., Sun, W. D., Pollak, Fred H., Gumbs, Godfrey, Burnham, G. T., Wang, X. (1998) Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH) laser structure using contactless electroreflectance. Journal of Applied Physics, 84 (4). 2229-2235 doi:10.1063/1.368288
Hava, S., Ivri, J., Auslender, M. (1998) Transmission of polarized infrared radiation through lamellar gratings on a silicon wafer. Journal of Applied Physics, 84 (4). 2236-2244 doi:10.1063/1.368289
Chou, W. C., Yang, C. S., Chu, A. H. M., Yeh, A. J., Ro, C. S., Lan, W. H., Tu, S. L., Tu, R. C., Chou, S. C., Su, Y. K., Uen, W. Y. (1998) Optical properties of ZnSe1−xSx epilayers grown on misoriented GaAs substrates. Journal of Applied Physics, 84 (4). 2245-2250 doi:10.1063/1.368360
Abdi, F., Aillerie, M., Bourson, P., Fontana, M. D., Polgar, K. (1998) Electro-optic properties in pure LiNbO3 crystals from the congruent to the stoichiometric composition. Journal of Applied Physics, 84 (4). 2251-2254 doi:10.1063/1.368290
Börner, F., Eichler, S., Polity, A., Krause-Rehberg, R., Hammer, R., Jurisch, M. (1998) Determination of the defect depth profile after saw cutting of GaAs wafers measured by positron annihilation. Journal of Applied Physics, 84 (4). 2255-2262 doi:10.1063/1.368291
Lozano B., W., de AraĂșjo, Cid B., Acioli, L. H., Messaddeq, Y. (1998) Negative nonlinear absorption in Er3+-doped fluoroindate glass. Journal of Applied Physics, 84 (4). 2263-2267 doi:10.1063/1.368292
Nassisi, V., Beloglazov, A., Giannico, E., Perrone, M. R., RainĂČ, A. (1998) Emission and emittance measurements of electron beams generated from Cu and diamond photocathodes. Journal of Applied Physics, 84 (4). 2268-2271 doi:10.1063/1.368293
Rauf, I. A., Egerton, R. F., Sayer, M. (1998) Texture generation by postdeposition annealing in a temperature gradient. Journal of Applied Physics, 84 (4). 2272-2277 doi:10.1063/1.368294
Fujiwara, H., Koh, Joohyun, Lee, Yeeheng, Wronski, C. R., Collins, R. W. (1998) Real time spectroscopic ellipsometry characterization of structural and thermal equilibration of amorphous silicon–carbon alloy p layers in p-i-n solar cell fabrication. Journal of Applied Physics, 84 (4). 2278-2286 doi:10.1063/1.368361
Studenikin, S. A., Golego, Nickolay, Cocivera, Michael (1998) Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis. Journal of Applied Physics, 84 (4). 2287-2294 doi:10.1063/1.368295
Daudin, B., Feuillet, G., HĂŒbner, J., Samson, Y., Widmann, F., Philippe, A., Bru-Chevallier, C., Guillot, G., Bustarret, E., Bentoumi, G., Deneuville, A. (1998) How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy. Journal of Applied Physics, 84 (4). 2295-2300 doi:10.1063/1.368296
Zhou, X. W., Wadley, H. N. G. (1998) Atomistic simulations of the vapor deposition of Ni/Cu/Ni multilayers: The effects of adatom incident energy. Journal of Applied Physics, 84 (4). 2301-2315 doi:10.1063/1.368297
Gehanno, V., Revenant-Brizard, C., Marty, A., Gilles, B. (1998) Studies of epitaxial Fe0.5Pd0.5 thin films by x-ray diffraction and polarized fluorescence absorption spectroscopy. Journal of Applied Physics, 84 (4). 2316-2323 doi:10.1063/1.368298
Shaheen, S. E., Jabbour, G. E., Morrell, M. M., Kawabe, Y., Kippelen, B., Peyghambarian, N., Nabor, M.-F., Schlaf, R., Mash, E. A., Armstrong, N. R. (1998) Bright blue organic light-emitting diode with improved color purity using a LiF/Al cathode. Journal of Applied Physics, 84 (4). 2324-2327 doi:10.1063/1.368299
Hong, H., Anderson, W. A., Haetty, J., Lee, E. H., Chang, H. C., Na, M. H., Luo, H., Petrou, A. (1998) Nitrogen ion implanted ZnSe/GaAs p-i-n photodetectors. Journal of Applied Physics, 84 (4). 2328-2333 doi:10.1063/1.368300
Nikitenko, V. R., Tak, Y.-H., BĂ€ssler, H. (1998) Rise time of electroluminescence from bilayer light emitting diodes. Journal of Applied Physics, 84 (4). 2334-2340 doi:10.1063/1.368301
Mariucci, L., Fortunato, G., Carluccio, R., Pecora, A., Giovannini, S., Massussi, F., Colalongo, L., Valdinoci, M. (1998) Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors. Journal of Applied Physics, 84 (4). 2341-2348 doi:10.1063/1.368302
AgullĂł-Rueda, F., Moreno, J. D., Montoya, E., Guerrero-Lemus, R., Martı́nez-Duart, J. M. (1998) Influence of wavelength on the Raman line shape in porous silicon. Journal of Applied Physics, 84 (4). 2349-2351 doi:10.1063/1.368303
Serna, R., Ballesteros, J. M., JimĂ©nez de Castro, M., Solis, J., Afonso, C. N. (1998) Optically active Er–Yb doped glass films prepared by pulsed laser deposition. Journal of Applied Physics, 84 (4). 2352-2354 doi:10.1063/1.368304
Fung, S., Xiaoliang, Xu, Youwen, Zhao, Wenhong, Sun, Xudong, Chen, Niefung, Sun, Tongnian, Sun, Chunxiang, Jiang (1998) Gallium/aluminum interdiffusion between n-GaN and sapphire. Journal of Applied Physics, 84 (4). 2355-2357 doi:10.1063/1.368362
Shi, Yi, Saito, Kenichi, Ishikuro, Hiroki, Hiramoto, Toshiro (1998) Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals. Journal of Applied Physics, 84 (4). 2358-2360 doi:10.1063/1.368346
Suh, K. Y., Lee, Hong H. (1998) Effect of processing conditions on the growth of strained Si1−XGeX layers on Si. Journal of Applied Physics, 84 (4). 2361-2363 doi:10.1063/1.368347
Bhar, G. C., Kumbhakar, P. (1998) Comment on “Dispersion of birefringence in AgGaS2 and CuGaS2” [J. Appl. Phys. 82, 3100 (1997)]. Journal of Applied Physics, 84 (4). 2364 doi:10.1063/1.368348
Yu, Peter Y., Choi, In-Hwan, Eom, Sung-Hwan (1998) Response to “Comment on ‘Dispersion of birefringence in AgGaS2 and CuGaS2’ ” [J. Appl. Phys. 84, 2364 (1998)]. Journal of Applied Physics, 84 (4). 2365 doi:10.1063/1.368505

See Also

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(1998, August) Journal of Applied Physics Vol. 84 (3) AIP Publishing
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