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Bhar, G. C., Kumbhakar, P. (1998) Comment on “Dispersion of birefringence in AgGaS2 and CuGaS2” [J. Appl. Phys. 82, 3100 (1997)]. Journal of Applied Physics, 84 (4). 2364 doi:10.1063/1.368348

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Reference TypeJournal (article/letter/editorial)
TitleComment on “Dispersion of birefringence in AgGaS2 and CuGaS2” [J. Appl. Phys. 82, 3100 (1997)]
JournalJournal of Applied Physics
AuthorsBhar, G. C.Author
Kumbhakar, P.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368348Search in ResearchGate
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Mindat Ref. ID5093189Long-form Identifiermindat:1:5:5093189:7
GUID0
Full ReferenceBhar, G. C., Kumbhakar, P. (1998) Comment on “Dispersion of birefringence in AgGaS2 and CuGaS2” [J. Appl. Phys. 82, 3100 (1997)]. Journal of Applied Physics, 84 (4). 2364 doi:10.1063/1.368348
Plain TextBhar, G. C., Kumbhakar, P. (1998) Comment on “Dispersion of birefringence in AgGaS2 and CuGaS2” [J. Appl. Phys. 82, 3100 (1997)]. Journal of Applied Physics, 84 (4). 2364 doi:10.1063/1.368348
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Yu, Peter Y., Choi, In-Hwan, Eom, Sung-Hwan (1998) Response to “Comment on ‘Dispersion of birefringence in AgGaS2 and CuGaS2’ ” [J. Appl. Phys. 84, 2364 (1998)]. Journal of Applied Physics, 84 (4). 2365 doi:10.1063/1.368505
Bhar, G. C., Kumbhakar, P. (2000) Comment on “ZnGeP2 birefringence and its temperature dispersion using polarized interference” [J. Appl. Phys. 81, 425 (1997); 77, 5942 (1995)]. Journal of Applied Physics, 87 (9). 4638-4639 doi:10.1063/1.373119
Choi, In-Hwan, Eom, Sung-Hwan, Yu, Peter Y. (1997) Dispersion of birefringence in AgGaS2 and CuGaS2. Journal of Applied Physics, 82 (6). 3100-3104 doi:10.1063/1.366150
Ohmer, Melvin C. (2000) Response to “Comment on ‘ZnGeP2 birefringence and its temperature dispersion using polarized interference’ ” [J. Appl. Phys. 87, 4638 (2000)]. Journal of Applied Physics, 87 (9). 4640-4641 doi:10.1063/1.373414
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Peng, L.-H. (1998) Erratum: “Strain dependence of hole mass and optical anisotropy in (110) quantum wells” [J. Appl. Phys. 82, 5711 (1997)]. Journal of Applied Physics, 84 (3). 1708 doi:10.1063/1.368242
Rosenberg, Z. (1999) Comment on “Dynamic analysis of the response of lateral piezoresistance gauges in shocked ceramics” [J. Appl. Phys. 82, 2845 (1997)] and “Determination of lateral stresses in shocked solids: Simplified analysis of piezoresistance gauge data” [J. Appl. Phys. 83, 747 (1998)]. Journal of Applied Physics, 86 (6). 3484-3486 doi:10.1063/1.371238
Heera, V. (1998) Comment on “Amorphization and defect recombination in ion implanted silicon carbide” [J. Appl. Phys. 81, 7181 (1997)]. Journal of Applied Physics, 83 (7). 3935-3936 doi:10.1063/1.367314
Romanov, S. G. (1998) Comment on “Enhancement of optical gain of semiconductors embedded in three-dimensional photonic crystals” [Appl. Phys. Lett. 71, 1616 (1997)]. Applied Physics Letters, 73 (4). 550-551 doi:10.1063/1.121929
Nan, Ce-Wen (1997) Comment on “The analysis of piezoelectric/piezomagnetic composite materials containing ellipsoidal inclusions” [J. Appl. Phys.81, 1378 (1997)]. Journal of Applied Physics, 82 (10). 5268-5269 doi:10.1063/1.366401
 
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