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Mariucci, L., Fortunato, G., Carluccio, R., Pecora, A., Giovannini, S., Massussi, F., Colalongo, L., Valdinoci, M. (1998) Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors. Journal of Applied Physics, 84 (4). 2341-2348 doi:10.1063/1.368302

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors
JournalJournal of Applied Physics
AuthorsMariucci, L.Author
Fortunato, G.Author
Carluccio, R.Author
Pecora, A.Author
Giovannini, S.Author
Massussi, F.Author
Colalongo, L.Author
Valdinoci, M.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368302Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5093114Long-form Identifiermindat:1:5:5093114:3
GUID0
Full ReferenceMariucci, L., Fortunato, G., Carluccio, R., Pecora, A., Giovannini, S., Massussi, F., Colalongo, L., Valdinoci, M. (1998) Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors. Journal of Applied Physics, 84 (4). 2341-2348 doi:10.1063/1.368302
Plain TextMariucci, L., Fortunato, G., Carluccio, R., Pecora, A., Giovannini, S., Massussi, F., Colalongo, L., Valdinoci, M. (1998) Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors. Journal of Applied Physics, 84 (4). 2341-2348 doi:10.1063/1.368302
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Giovannini, S., Carluccio, R., Mariucci, L., Pecora, A., Fortunato, G., Reita, C., Plais, F., Pribat, D. (1997) Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors. Applied Physics Letters, 71 (9). 1216-1218 doi:10.1063/1.119855
Giovannini, S., Bove, A., Valletta, A., Mariucci, L., Pecora, A., Fortunato, G. (2000) Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors. Applied Physics Letters, 76 (22). 3268-3270 doi:10.1063/1.126602
Mariucci, L., Valletta, A., Gaucci, P., Fortunato, G., Templier, F. (2006) Hot-carrier effects in p-channel polycrystalline silicon thin film transistors. Applied Physics Letters, 89 (18). 183518pp. doi:10.1063/1.2378587
Valletta, A., Gaucci, P., Mariucci, L., Pecora, A., CuscunĂ , M., Maiolo, L., Fortunato, G. (2010) Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects. Journal of Applied Physics, 107 (7). 74505pp. doi:10.1063/1.3359649
Valletta, A., Gaucci, P., Mariucci, L., Pecora, A., CuscunĂ , M., Maiolo, L., Fortunato, G., Brotherton, S. D. (2009) Role of gate oxide thickness in controlling short channel effects in polycrystalline silicon thin film transistors. Applied Physics Letters, 95 (3). 33507pp. doi:10.1063/1.3177196
Bonfiglietti, A., Valletta, A., Mariucci, L., Pecora, A., Fortunato, G. (2003) Noise performance of polycrystalline silicon thin-film transistors made by sequential lateral solidification. Applied Physics Letters, 82 (16). 2709-2711 doi:10.1063/1.1568820
Valletta, A., Gaucci, P., Mariucci, L., Pecora, A., Maiolo, L., Fortunato, G. (2011) Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors. Applied Physics Letters, 99 (5). 53503pp. doi:10.1063/1.3621874
Valletta, A., Mariucci, L., Fortunato, G., Brotherton, S. D. (2003) Surface-scattering effects in polycrystalline silicon thin-film transistors. Applied Physics Letters, 82 (18). 3119-3121 doi:10.1063/1.1571960
Valletta, A., Mariucci, L., Bonfiglietti, A., Fortunato, G., Brotherton, S. D. (2005) Dopant and defect interactions in polycrystalline silicon thin-film transistors. Journal of Applied Physics, 97 (10). 104515pp. doi:10.1063/1.1906293
Gaucci, P., Valletta, A., Mariucci, L., Pecora, A., CuscunĂ , M., Maiolo, L., Fortunato, G. (2008) Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors. Applied Physics Letters, 93 (19). 193512pp. doi:10.1063/1.3027478
Valletta, A., Gaucci, P., Mariucci, L., Fortunato, G., Brotherton, S. D. (2004) Kink effect in short-channel polycrystalline silicon thin-film transistors. Applied Physics Letters, 85 (15). 3113-3115 doi:10.1063/1.1806252
 
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