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Giri, P. K., Mohapatra, Y. N. (1998) Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering. Journal of Applied Physics, 84 (4). 1901-1912 doi:10.1063/1.368351

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering
JournalJournal of Applied Physics
AuthorsGiri, P. K.Author
Mohapatra, Y. N.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368351Search in ResearchGate
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Mindat Ref. ID5093195Long-form Identifiermindat:1:5:5093195:8
GUID0
Full ReferenceGiri, P. K., Mohapatra, Y. N. (1998) Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering. Journal of Applied Physics, 84 (4). 1901-1912 doi:10.1063/1.368351
Plain TextGiri, P. K., Mohapatra, Y. N. (1998) Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering. Journal of Applied Physics, 84 (4). 1901-1912 doi:10.1063/1.368351
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Giri, P. K., Mohapatra, Y. N. (1997) Compensating defect in deep buried layers produced by MeV heavy ions in n-silicon. Applied Physics Letters, 71 (12). 1682-1684 doi:10.1063/1.119792
Giri, P. K., Mohapatra, Y. N. (2000) Evidence of metastability with athermal ionization from defect clusters in ion-damaged silicon. Physical Review B, 62 (24) 16561-16565 doi:10.1103/physrevb.62.16561
Giri, P. K., Mohapatra, Y. N. (2000) Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon. Physical Review B, 62 (4) 2496-2504 doi:10.1103/physrevb.62.2496
Giri, P. K., Dhar, S., Kulkarni, V. N., Mohapatra, Y. N. (1997) Electrically active defects in as-implanted, deep buried layers inp-type silicon. Journal of Applied Physics, 81 (1). 260-263 doi:10.1063/1.363992
Chavan, S. T., Bhave, P. S., Bhoraskar, V. N., Kanjilal, D. (1995) Damage induced by 90 MeV silicon ions in crystalline silicon. Journal of Applied Physics, 78 (4). 2328-2332 doi:10.1063/1.360150
Fatima, S., Wong-Leung, J., Fitz Gerald, J., Jagadish, C. (1998) Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions. Applied Physics Letters, 72 (23). 3044-3046 doi:10.1063/1.121535
Giri, P. K., Mohapatra, Y. N. (1995) Nonexponentiality in photoinduced current transients in undoped semi‐insulating gallium arsenide. Journal of Applied Physics, 78 (1). 262-268 doi:10.1063/1.360668
Marie, P., Levalois, M., Paumier, E. (1996) Swift‐heavy‐ion induced damage in germanium: An evaluation of defect introduction rates. Journal of Applied Physics, 79 (10). 7555-7562 doi:10.1063/1.362411
Giri, P. K., Dhar, Sankar, Kulkarni, V. N., Mohapatra, Y. N. (1998) Charge redistribution among defects in heavily damaged silicon. Physical Review B, 57 (23) 14603-14606 doi:10.1103/physrevb.57.14603
Raynaud, C., Ghaffour, K., Ortolland, S., Locatelli, M.-L., Souifi, K., Guillot, G., Chante, J.-P. (1998) Electrical characterization of silicon carbide n+pp+ diodes with an N-implanted n+ emitter. Journal of Applied Physics, 84 (6). 3073-3077 doi:10.1063/1.368507
Giri, P. K., Coffa, S., Rimini, E. (2001) Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon. Applied Physics Letters, 78 (3). 291-293 doi:10.1063/1.1339253
 
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