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Kang, T. W., Park, S. H., Song, H., Kim, T. W., Yoon, G. S., Kim, C. O. (1998) Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates. Journal of Applied Physics, 84 (4). 2082-2085 doi:10.1063/1.368269

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates
JournalJournal of Applied Physics
AuthorsKang, T. W.Author
Park, S. H.Author
Song, H.Author
Kim, T. W.Author
Yoon, G. S.Author
Kim, C. O.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368269Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5093048Long-form Identifiermindat:1:5:5093048:1
GUID0
Full ReferenceKang, T. W., Park, S. H., Song, H., Kim, T. W., Yoon, G. S., Kim, C. O. (1998) Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates. Journal of Applied Physics, 84 (4). 2082-2085 doi:10.1063/1.368269
Plain TextKang, T. W., Park, S. H., Song, H., Kim, T. W., Yoon, G. S., Kim, C. O. (1998) Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates. Journal of Applied Physics, 84 (4). 2082-2085 doi:10.1063/1.368269
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Kang, T. W., Park, S. H., Cho, H. D., Kwak, M. Y., Eom, G. S., Kim, T. W. (1998) Hydrogenation and Annealing Effects on GaN Epilayers Grown on Sapphire Substrates. Japanese Journal of Applied Physics, 37. 4417-4418 doi:10.1143/jjap.37.4417
Park, S. H., Kang, T. W., Kim, T. W. (2004) Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates. Journal of Materials Science, 39. 3217-3219 doi:10.1023/b:jmsc.0000025864.93045.5f
Kang, T. W., Yuldashev, Sh. U., Bolotin, I. L., Park, S. H., Kim, D. Y., Won, S. H., Jung, K. S., Kim, T. W. (2000) Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates. Journal of Applied Physics, 88 (2). 790-793 doi:10.1063/1.373738
Yoon, I. T., Park, C. S., Kim, H. J., Kim, Y. G., Kang, T. W., Jeong, M. C., Ham, M. H., Myoung, J. M. (2004) Characterization of ferromagnetic Ga1−xMnxN layers grown on sapphire (0001) substrates. Journal of Applied Physics, 95 (2). 591-596 doi:10.1063/1.1633340
Kim, N. H., Kang, T. W., Kim, T. W. (2004) Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates. Journal of Materials Science, 39. 6343-6345 doi:10.1023/b:jmsc.0000043604.83234.1f
Kim, M. D., Park, H. S., Kim, T. W. (1998) Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates. Journal of Applied Physics, 84 (6). 3125-3128 doi:10.1063/1.368510
Park, Y. S., Lee, H. S., Na, J. H., Kim, H. J., Si, Sang Man, Kim, Hwa-Mok, Kang, T. W., Oh, Jae Eung (2003) Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy. Journal of Applied Physics, 94 (1). 800-802 doi:10.1063/1.1581375
Gfroerer, T. H., Gillespie, C. E., Campbell, J. P., Wanlass, M. W. (2005) Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates. Journal of Applied Physics, 98 (9). 93708pp. doi:10.1063/1.2126153
Koo, T. K., O, Byungsung, Yu, Y.-M., Kim, D.-J., Kim, C.-S., Choi, Y. D., Lee, J. W., Yoon, M.-Y., Yu, P. Y., Kang, T. W. (2010) New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy. Journal of Applied Physics, 108 (11). 113508pp. doi:10.1063/1.3514550
Fu, D. J., Kang, T. W., Yuldashev, Sh. U., Kim, N. H., Park, S. H., Yun, J. S., Chung, K. S. (2001) Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy. Applied Physics Letters, 78 (9). 1309-1311 doi:10.1063/1.1351516
Shon, Yoon, Kwon, Young Hae, Yuldashev, Sh. U., Park, Y. S., Fu, D. J., Kim, D. Y., Kim, H. S., Kang, T. W. (2003) Diluted magnetic semiconductor of p-type GaN epilayers implanted with Mn+ ions. Journal of Applied Physics, 93 (3). 1546-1549 doi:10.1063/1.1536735
 
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