Vote for your favorite mineral in #MinCup25! - Stibnite vs. Perovskite
It's all about how minerals interact with humans as dramatic #stibnite faces off against futuristic #perovskite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Kim, N. H., Kang, T. W., Kim, T. W. (2004) Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates. Journal of Materials Science, 39. 6343-6345 doi:10.1023/b:jmsc.0000043604.83234.1f

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleOptical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates
JournalJournal of Materials Science
AuthorsKim, N. H.Author
Kang, T. W.Author
Kim, T. W.Author
Year2004 (October)Volume39
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1023/b:jmsc.0000043604.83234.1fSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID10002169Long-form Identifiermindat:1:5:10002169:5
GUID0
Full ReferenceKim, N. H., Kang, T. W., Kim, T. W. (2004) Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates. Journal of Materials Science, 39. 6343-6345 doi:10.1023/b:jmsc.0000043604.83234.1f
Plain TextKim, N. H., Kang, T. W., Kim, T. W. (2004) Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates. Journal of Materials Science, 39. 6343-6345 doi:10.1023/b:jmsc.0000043604.83234.1f
In(n.d.) Journal of Materials Science Vol. 39. Springer Science and Business Media LLC

See Also

These are possibly similar items as determined by title/reference text matching only.

Park, S. H., Kang, T. W., Kim, T. W. (2004) Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates. Journal of Materials Science, 39. 3217-3219 doi:10.1023/b:jmsc.0000025864.93045.5f
Park, S. H., Kang, T. W., Kim, T. W. (2004) p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing. Journal of Materials Science, 39. 6353-6355 doi:10.1023/b:jmsc.0000043607.55457.2d
Jung, Woon Hyung, Kang, Tae Won, Kim, Tae Whan (2002) Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l509
Kang, T. W., Park, S. H., Song, H., Kim, T. W., Yoon, G. S., Kim, C. O. (1998) Mechanism of donor–acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates. Journal of Applied Physics, 84 (4). 2082-2085 doi:10.1063/1.368269
Jung, Woon Hyung, Kang, Tae Won, Kim, Tae Whan, Chung, Kwan Soo (2000) Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l1084
Kang, Tae Won, Yuldashev, Shavkat U., Kim, Duek Young, Kim, Tae Whan (2000) Effects of Hydrogenation and Annealing on the Deep Levels in GaN Epilayers Grown on Sapphire Substrates. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l25
Kang, T.W., Park, C.S., Kim, T.W. (2001) The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates. Applied Surface Science, 180. 81-86 doi:10.1016/s0169-4332(01)00320-8
Kim, M. J., Lee, H. S., Lee, J. Y., Kim, T. W., Yoo, K. H., Kim, M. D. (2004) Effect of thermal annealing on the surface, optical, and structural properties of p-type ZnSe thin films grown on GaAs (100) substrates. Journal of Materials Science, 39. 323-327 doi:10.1023/b:jmsc.0000007766.16695.29
Ryu, Y. S., Song, B. S., Kang, T. W., Kim, T. W. (2004) Dependence of the structural and the electrical properties on the Hg/Te flux-rate ratios for Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers. Journal of Materials Science, 39. 1147-1149 doi:10.1023/b:jmsc.0000012966.19192.85
Lee, H. S., Lee, J. Y., Kim, T. W., Kim, D. W., Cho, W. J. (2004) Formation mechanism of preferential c-axis oriented ZnO thin films grown on p-Si substrates. Journal of Materials Science, 39. 3525-3528 doi:10.1023/b:jmsc.0000026968.24617.f6
Kang, T. W., Park, S. H., Cho, H. D., Kwak, M. Y., Eom, G. S., Kim, T. W. (1998) Hydrogenation and Annealing Effects on GaN Epilayers Grown on Sapphire Substrates. Japanese Journal of Applied Physics, 37. 4417-4418 doi:10.1143/jjap.37.4417
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 18, 2025 09:42:09
Go to top of page