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Koleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., Gorman, R. J. (1998) Growth model for GaN with comparison to structural, optical, and electrical properties. Journal of Applied Physics, 84 (4). 1998-2010 doi:10.1063/1.368353

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Reference TypeJournal (article/letter/editorial)
TitleGrowth model for GaN with comparison to structural, optical, and electrical properties
JournalJournal of Applied Physics
AuthorsKoleske, D. D.Author
Wickenden, A. E.Author
Henry, R. L.Author
DeSisto, W. J.Author
Gorman, R. J.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368353Search in ResearchGate
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Mindat Ref. ID5093199Long-form Identifiermindat:1:5:5093199:4
GUID0
Full ReferenceKoleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., Gorman, R. J. (1998) Growth model for GaN with comparison to structural, optical, and electrical properties. Journal of Applied Physics, 84 (4). 1998-2010 doi:10.1063/1.368353
Plain TextKoleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., Gorman, R. J. (1998) Growth model for GaN with comparison to structural, optical, and electrical properties. Journal of Applied Physics, 84 (4). 1998-2010 doi:10.1063/1.368353
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Fatemi, M., Wickenden, A. E., Koleske, D. D., Twigg, M. E., Freitas, J. A., Henry, R. L., Gorman, R. J. (1998) Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates. Applied Physics Letters, 73 (5). 608-610 doi:10.1063/1.121871
Koleske, D. D., Wickenden, A. E., Henry, R. L., Twigg, M. E., Culbertson, J. C., Gorman, R. J. (1998) Enhanced GaN decomposition in H2 near atmospheric pressures. Applied Physics Letters, 73 (14). 2018-2020 doi:10.1063/1.122354
Koleske, D. D., Wickenden, A. E., Henry, R. L., Twigg, M. E., Culbertson, J. C., Gorman, R. J. (1999) Erratum: “Enhanced GaN decomposition in H2 near atmospheric pressures” [Appl. Phys. Lett. 73, 2018 (1998)]. Applied Physics Letters, 75 (11). 1646 doi:10.1063/1.124830
Koleske, D. D., Twigg, M. E., Wickenden, A. E., Henry, R. L., Gorman, R. J., Freitas, J. A., Fatemi, M. (1999) Properties of Si-doped GaN films grown using multiple AlN interlayers. Applied Physics Letters, 75 (20). 3141-3143 doi:10.1063/1.125257
Twigg, M. E., Henry, R. L., Wickenden, A. E., Koleske, D. D., Culbertson, J. C. (1999) Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire. Applied Physics Letters, 75 (5). 686-688 doi:10.1063/1.124482
Oila, J., Saarinen, K., Wickenden, A. E., Koleske, D. D., Henry, R. L., Twigg, M. E. (2003) Ga vacancies and grain boundaries in GaN. Applied Physics Letters, 82 (7). 1021-1023 doi:10.1063/1.1542946
Wu, C. I., Kahn, A., Wickenden, A. E., Koleske, D., Henry, R. L. (2001) Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces. Journal of Applied Physics, 89 (1). 425-429 doi:10.1063/1.1331653
Koleske, D. D., Henry, R. L., Twigg, M. E., Culbertson, J. C., Binari, S. C., Wickenden, A. E., Fatemi, M. (2002) Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC. Applied Physics Letters, 80 (23). 4372-4374 doi:10.1063/1.1484553
Twigg, M. E., Koleske, D. D., Wickenden, A. E., Henry, R. L., Binari, S. C. (2001) Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 79 (26). 4322-4324 doi:10.1063/1.1428769
Kim, S., Henry, R. L., Wickenden, A. E., Koleske, D. D., Rhee, S. J., White, J. O., Myoung, J. M., Kim, K., Li, X., Coleman, J. J., Bishop, S. G. (2001) Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN. Journal of Applied Physics, 90 (1). 252-259 doi:10.1063/1.1378058
Zvanut, M. E., Matlock, D. M., Henry, R. L., Koleske, Daniel, Wickenden, Alma (2004) Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy. Journal of Applied Physics, 95 (4). 1884-1887 doi:10.1063/1.1639954
 
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