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Yeo, Y. C., Chong, T. C., Li, M. F., Fan, W. J. (1998) Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers. Journal of Applied Physics, 84 (4). 1813-1819 doi:10.1063/1.368338

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
JournalJournal of Applied Physics
AuthorsYeo, Y. C.Author
Chong, T. C.Author
Li, M. F.Author
Fan, W. J.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368338Search in ResearchGate
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Mindat Ref. ID5093169Long-form Identifiermindat:1:5:5093169:3
GUID0
Full ReferenceYeo, Y. C., Chong, T. C., Li, M. F., Fan, W. J. (1998) Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers. Journal of Applied Physics, 84 (4). 1813-1819 doi:10.1063/1.368338
Plain TextYeo, Y. C., Chong, T. C., Li, M. F., Fan, W. J. (1998) Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers. Journal of Applied Physics, 84 (4). 1813-1819 doi:10.1063/1.368338
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Park, Seoung-Hwan (2000) Many-body optical gain of (101Ì„0) wurtzite GaN/AlGaN quantum-well lasers. Applied Physics Letters, 77 (25). 4095-4097 doi:10.1063/1.1334911
Yeo, Y. C., Chong, T. C., Li, M. F. (1998) Electronic band structures and effective-mass parameters of wurtzite GaN and InN. Journal of Applied Physics, 83 (3). 1429-1436 doi:10.1063/1.366847
Suzuki, Masakatsu, Uenoyama, Takeshi (1996) Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l953
Fan, W. J., Li, M. F., Chong, T. C., Xia, J. B. (1996) Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells. Journal of Applied Physics, 80 (6). 3471-3478 doi:10.1063/1.363217
Ohtoshi, T., Niwa, A., Kuroda, T. (1997) Dependence of optical gain on crystal orientation in wurtzite–GaN strained quantum-well lasers. Journal of Applied Physics, 82 (4). 1518-1520 doi:10.1063/1.365951
Radtke, R. J., Waghmare, U., Ehrenreich, H., Grein, C. H. (1998) Theoretical performance of wurtzite and zincblende InGaN/GaN quantum well lasers. Applied Physics Letters, 73 (15). 2087-2089 doi:10.1063/1.122386
Chow, W. W., Kneissl, M., Northrup, J. E., Johnson, N. M. (2007) Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers. Applied Physics Letters, 90 (10). 101116pp. doi:10.1063/1.2679969
Chow, W. W., Amano, H., Takeuchi, T., Han, J. (1999) Quantum-well width dependence of threshold current density in InGaN lasers. Applied Physics Letters, 75 (2). 244-246 doi:10.1063/1.124336
Park, Seoung-Hwan (2003) Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l170
Wu, Shudong, Wan, Li (2011) Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers. Journal of Applied Physics, 110 (12). 123109pp. doi:10.1063/1.3672819
Park, Seoung-Hwan, Ahn, Doyeol, Park, E. H., Yoo, T. K., Lee, Yong-Tak (2005) Many-body optical gain and intraband relaxation time of wurtzite InGaN∕GaN quantum-well lasers and comparison with experiment. Applied Physics Letters, 87 (4). 44103pp. doi:10.1063/1.2001744
 
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