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Hauke, M., Jakumeit, J., Krafft, B., Nimtz, G., Förster, A., Lüth, H. (1998) DX centers in Al0.3Ga0.7As/GaAs analyzed by point contact measurements. Journal of Applied Physics, 84 (4). 2034-2039 doi:10.1063/1.368261

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Reference TypeJournal (article/letter/editorial)
TitleDX centers in Al0.3Ga0.7As/GaAs analyzed by point contact measurements
JournalJournal of Applied Physics
AuthorsHauke, M.Author
Jakumeit, J.Author
Krafft, B.Author
Nimtz, G.Author
Förster, A.Author
Lüth, H.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368261Search in ResearchGate
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Mindat Ref. ID5093033Long-form Identifiermindat:1:5:5093033:9
GUID0
Full ReferenceHauke, M., Jakumeit, J., Krafft, B., Nimtz, G., Förster, A., Lüth, H. (1998) DX centers in Al0.3Ga0.7As/GaAs analyzed by point contact measurements. Journal of Applied Physics, 84 (4). 2034-2039 doi:10.1063/1.368261
Plain TextHauke, M., Jakumeit, J., Krafft, B., Nimtz, G., Förster, A., Lüth, H. (1998) DX centers in Al0.3Ga0.7As/GaAs analyzed by point contact measurements. Journal of Applied Physics, 84 (4). 2034-2039 doi:10.1063/1.368261
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Griebel, M., Indlekofer, K. M., Förster, A., Lüth, H. (1998) Transport properties of gated resonant tunneling diodes in the single electron regime. Journal of Applied Physics, 84 (12). 6718-6724 doi:10.1063/1.368998
Zhan, H. H., Kang, J. Y., Wu, Z. Y., Huang, Q. S. (1998) Fine structure of DX(Sn) centers in AlxGa1−xAs. Journal of Applied Physics, 84 (5). 2497-2500 doi:10.1063/1.368614
Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., Nimtz, G. (1997) Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71 (8). 1118-1120 doi:10.1063/1.119745
Jakob, M., Stahl, H., Knoch, J., Appenzeller, J., Lengeler, B., Hardtdegen, H., Lüth, H. (2000) Direct determination of the Andreev reflection probability by means of point contact spectroscopy. Applied Physics Letters, 76 (9). 1152-1154 doi:10.1063/1.125967
Miwa, R. H., Schmidt, T. M. (1999) DX centers in GaAs/Si-δ/AlAs heterostructure. Applied Physics Letters, 74 (14). 1999-2001 doi:10.1063/1.123726
Jakob, M., Stahl, H., Knoch, J., Appenzeller, J., Lengeler, B., Hardtdegen, H., Lüth, H. (2000) Erratum: “Direct determination of the Andreev reflection probability by means of point contact spectroscopy” [Appl. Phys. Lett. 76, 1152 (2000)]. Applied Physics Letters, 76 (19). 2800 doi:10.1063/1.126479
Fung, S., Shan, Y. Y., Deng, A. H., Ling, C. C., Beling, C. D., Lynn, K. G. (1998) Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation. Journal of Applied Physics, 84 (4). 1889-1892 doi:10.1063/1.368316
Kamp, M., Mörsch, G., Gräber, J., Lüth, H. (1994) Te doping of GaAs using diethyl‐tellurium. Journal of Applied Physics, 76 (3). 1974-1976 doi:10.1063/1.357660
Gombia, E., Mosca, R., Franchi, S., Ghezzi, C., Magnanini, R. (1998) Minority carrier capture at DX centers in AlGaSb Schottky diodes. Journal of Applied Physics, 84 (9). 5337-5341 doi:10.1063/1.368783
Li, G., Chua, S. J., Xu, S. J., Wang, X. C., Saher Helmy, A., Ke, Mao-Long, Marsh, J. H. (1998) Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing. Applied Physics Letters, 73 (23). 3393-3395 doi:10.1063/1.122777
Lehmann, Hauke, Scholtyssek, Jan M., Herrmann, Claudia, Herfort, Jens, Merkt, Ulrich, Meier, Guido (2011) Point contact Andreev spectroscopy of epitaxial Co2FeSi Heusler alloys on GaAs (001). Journal of Applied Physics, 110 (6). 63908pp. doi:10.1063/1.3632063
 
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