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Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., Nimtz, G. (1997) Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71 (8). 1118-1120 doi:10.1063/1.119745

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Reference TypeJournal (article/letter/editorial)
TitleSpace-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs
JournalApplied Physics Letters
AuthorsKordoš, P.Author
Marso, M.Author
Förster, A.Author
Darmo, J.Author
Betko, J.Author
Nimtz, G.Author
Year1997 (August 25)Volume71
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.119745Search in ResearchGate
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Mindat Ref. ID8520496Long-form Identifiermindat:1:5:8520496:2
GUID0
Full ReferenceKordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., Nimtz, G. (1997) Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71 (8). 1118-1120 doi:10.1063/1.119745
Plain TextKordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., Nimtz, G. (1997) Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71 (8). 1118-1120 doi:10.1063/1.119745
In(1997, August) Applied Physics Letters Vol. 71 (8) AIP Publishing

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Betko, J., Morvic, M., Novák, J., Förster, A., Kordoš, P. (1999) Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Journal of Applied Physics, 86 (11). 6243-6248 doi:10.1063/1.371679
Darmo, J., Dubecký, F., Kordoš, P., Förster, A. (1998) Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Applied Physics Letters, 72 (5). 590-592 doi:10.1063/1.120815
Betko, J., Morvic, M., Novák, J., Förster, A., Kordos̆, P. (1996) Hall mobility analysis in low‐temperature‐grown molecular‐beam epitaxial GaAs. Applied Physics Letters, 69 (17). 2563-2565 doi:10.1063/1.117740
Kordoš, P., Marso, M., Luysberg, M. (1998) Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness. Applied Physics Letters, 72 (15). 1851-1853 doi:10.1063/1.121204
Kordoš, P., Förster, A., Betko, J., Morvic, M., Novák, J. (1995) Semi‐insulating GaAs layers grown by molecular‐beam epitaxy. Applied Physics Letters, 67 (7). 983-985 doi:10.1063/1.114966
Mikulics, M., Michael, E. A., Schieder, R., Stutzki, J., Güsten, R., Marso, M., van der Hart, A., Bochem, H. P., Lüth, H., Kordoš, P. (2006) Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs. Applied Physics Letters, 88 (4). 41118pp. doi:10.1063/1.2168250
Kordoš, P., Morvic, M., Betko, J., Van Hove, J. M., Wowchak, A. M., Chow, P. P. (2000) Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers. Journal of Applied Physics, 88 (10). 5821-5826 doi:10.1063/1.1319966
Fang, Z.‐Q., Look, D. C. (1992) Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs. Applied Physics Letters, 61 (12). 1438-1440 doi:10.1063/1.107562
Adam, R., Mikulics, M., Förster, A., Schelten, J., Siegel, M., Kordoš, P., Zheng, X., Wu, S., Sobolewski, R. (2002) Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Applied Physics Letters, 81 (18). 3485-3487 doi:10.1063/1.1518159
Kordoš, P., Morvic, M., Betko, J., Novák, J., Flynn, J., Brandes, G. R. (2004) Conductivity and Hall effect of free-standing highly resistive epitaxial GaN:Fe substrates. Applied Physics Letters, 85 (23). 5616-5618 doi:10.1063/1.1831568
Mikulics, M., Marso, M., Javorka, P., Kordoš, P., Lüth, H., Kočan, M., Rizzi, A., Wu, S., Sobolewski, R. (2005) Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN. Applied Physics Letters, 86 (21). 211110pp. doi:10.1063/1.1938004
 
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