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Darmo, J., Dubecký, F., Kordoš, P., Förster, A. (1998) Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Applied Physics Letters, 72 (5). 590-592 doi:10.1063/1.120815

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs
JournalApplied Physics Letters
AuthorsDarmo, J.Author
Dubecký, F.Author
Kordoš, P.Author
Förster, A.Author
Year1998 (February 2)Volume72
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.120815Search in ResearchGate
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Mindat Ref. ID8521519Long-form Identifiermindat:1:5:8521519:9
GUID0
Full ReferenceDarmo, J., Dubecký, F., Kordoš, P., Förster, A. (1998) Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Applied Physics Letters, 72 (5). 590-592 doi:10.1063/1.120815
Plain TextDarmo, J., Dubecký, F., Kordoš, P., Förster, A. (1998) Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Applied Physics Letters, 72 (5). 590-592 doi:10.1063/1.120815
In(1998, February) Applied Physics Letters Vol. 72 (5) AIP Publishing

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Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., Nimtz, G. (1997) Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71 (8). 1118-1120 doi:10.1063/1.119745
Betko, J., Morvic, M., Novák, J., Förster, A., Kordoš, P. (1999) Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Journal of Applied Physics, 86 (11). 6243-6248 doi:10.1063/1.371679
Kordoš, P., Marso, M., Luysberg, M. (1998) Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness. Applied Physics Letters, 72 (15). 1851-1853 doi:10.1063/1.121204
Betko, J., Morvic, M., Novák, J., Förster, A., Kordos̆, P. (1996) Hall mobility analysis in low‐temperature‐grown molecular‐beam epitaxial GaAs. Applied Physics Letters, 69 (17). 2563-2565 doi:10.1063/1.117740
Chen, N. C., Wang, P. Y., Chen, J. F. (1998) Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature. Applied Physics Letters, 72 (9). 1081-1083 doi:10.1063/1.120971
Kordoš, P., Förster, A., Betko, J., Morvic, M., Novák, J. (1995) Semi‐insulating GaAs layers grown by molecular‐beam epitaxy. Applied Physics Letters, 67 (7). 983-985 doi:10.1063/1.114966
Chen, N. C., Wang, P. Y., Chen, J. F. (1998) Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs. Journal of Applied Physics, 83 (3). 1403-1409 doi:10.1063/1.366844
Adam, R., Mikulics, M., Förster, A., Schelten, J., Siegel, M., Kordoš, P., Zheng, X., Wu, S., Sobolewski, R. (2002) Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Applied Physics Letters, 81 (18). 3485-3487 doi:10.1063/1.1518159
Hobart, K. D., Godbey, D. J., Thompson, P. E. (1992) Post‐growth annealing of low temperature‐grown Sb‐doped Si molecular beam epitaxial films. Applied Physics Letters, 61 (1). 76-78 doi:10.1063/1.107618
Fang, Z.‐Q., Look, D. C. (1992) Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs. Applied Physics Letters, 61 (12). 1438-1440 doi:10.1063/1.107562
Luo, J. K., Thomas, H., Morgan, D. V., Westwood, D. (1994) Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic precipitation and the change of resistivity. Applied Physics Letters, 64 (26). 3614-3616 doi:10.1063/1.111216
 
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