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Huang, Mingwei, Goldsman, Neil, Chang, Chien-Hwa, Mayergoyz, Isaak, McGarrity, James M., Woolard, Dwight (1998) Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics. Journal of Applied Physics, 84 (4). 2065-2070 doi:10.1063/1.368267

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Reference TypeJournal (article/letter/editorial)
TitleDetermining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics
JournalJournal of Applied Physics
AuthorsHuang, MingweiAuthor
Goldsman, NeilAuthor
Chang, Chien-HwaAuthor
Mayergoyz, IsaakAuthor
McGarrity, James M.Author
Woolard, DwightAuthor
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368267Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5093045Long-form Identifiermindat:1:5:5093045:4
GUID0
Full ReferenceHuang, Mingwei, Goldsman, Neil, Chang, Chien-Hwa, Mayergoyz, Isaak, McGarrity, James M., Woolard, Dwight (1998) Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics. Journal of Applied Physics, 84 (4). 2065-2070 doi:10.1063/1.368267
Plain TextHuang, Mingwei, Goldsman, Neil, Chang, Chien-Hwa, Mayergoyz, Isaak, McGarrity, James M., Woolard, Dwight (1998) Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics. Journal of Applied Physics, 84 (4). 2065-2070 doi:10.1063/1.368267
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

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Powell, Stephen K., Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, Flynn B. (2005) High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 97 (4). 46106pp. doi:10.1063/1.1849424
Lin, Chung-Kai, Goldsman, Neil, Mayergoyz, Isaak D., Chang, Chien-Hwa (1999) A transient solution of the Boltzmann equation exposes energy overshoot in semiconductor devices. Journal of Applied Physics, 86 (1). 468-475 doi:10.1063/1.370754
Powell, Stephen K., Goldsman, Neil, McGarrity, James M., Bernstein, Joseph, Scozzie, Charles J., Lelis, Aivars (2002) Physics-based numerical modeling and characterization of6H-silicon-carbide metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 92 (7). 4053-4061 doi:10.1063/1.1499523
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Ettisserry, D. P., Goldsman, N., Lelis, A. (2014) A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 115 (10). 103706pp. doi:10.1063/1.4868579
Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J. (2015) Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 118 (4). 44507pp. doi:10.1063/1.4927619
Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M. (2006) A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges. Journal of Applied Physics, 100 (4). 44516pp. doi:10.1063/1.2335673
Scozzie, C. J., McLean, F. B., McGarrity, J. M. (1997) Modeling the temperature response of 4H silicon carbide junction field-effect transistors. Journal of Applied Physics, 81 (11). 7687-7689 doi:10.1063/1.365349
Ohshima, Takeshi, Itoh, Hisayoshi, Yoshikawa, Masahito (2001) Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide. Journal of Applied Physics, 90 (6). 3038-3041 doi:10.1063/1.1394895
Los, Andrei V. (2006) Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps. Journal of Applied Physics, 100 (1). 14507pp. doi:10.1063/1.2212069
 
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