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Dehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs. Journal of Applied Physics, 84 (4). 2127-2132 doi:10.1063/1.368357

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Reference TypeJournal (article/letter/editorial)
TitleX-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
JournalJournal of Applied Physics
AuthorsDehaese, O.Author
Wallart, X.Author
Schuler, O.Author
Mollot, F.Author
Year1998 (August 15)Volume84
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.368357Search in ResearchGate
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Mindat Ref. ID5093206Long-form Identifiermindat:1:5:5093206:3
GUID0
Full ReferenceDehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs. Journal of Applied Physics, 84 (4). 2127-2132 doi:10.1063/1.368357
Plain TextDehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs. Journal of Applied Physics, 84 (4). 2127-2132 doi:10.1063/1.368357
In(1998, August) Journal of Applied Physics Vol. 84 (4) AIP Publishing

See Also

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Schuler, O., Dehaese, O., Wallart, X., Mollot, F. (1998) Interface quality and electron transfer at the GaInP on GaAs heterojunction. Journal of Applied Physics, 84 (2). 765-769 doi:10.1063/1.368135
Dehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) XPS study of GaInP on GaAs interface. Applied Surface Science, 123. 523-527 doi:10.1016/s0169-4332(97)00534-5
Dehaese, Olivier, Wallart, Xavier, Schuler, Olivier, Mollot, Francis (1997) As Surface Segregation during the Growth of GaInP on GaAs. Japanese Journal of Applied Physics, 36. 6620-6624 doi:10.1143/jjap.36.6620
Dehaese, O., Wallart, X., Mollot, F. (1995) Kinetic model of element III segregation during molecular beam epitaxy of III‐III’‐V semiconductor compounds. Applied Physics Letters, 66 (1). 52-54 doi:10.1063/1.114180
Vignaud, D., Wallart, X., Mollot, F., Sermage, B. (1998) Photoluminescence study of the interface in type II InAlAs–InP heterostructures. Journal of Applied Physics, 84 (4). 2138-2145 doi:10.1063/1.368275
Wallart, X., Schuler, O., Deresmes, D., Mollot, F. (2000) Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1−xInxP layers. Applied Physics Letters, 76 (15). 2080-2082 doi:10.1063/1.126261
Schuler, O, Wallart, X, Mollot, F (1999) A gas-source MBE growth study of strained Ga1−xInxP layers on GaAs. Journal of Crystal Growth, 201. 280-283 doi:10.1016/s0022-0248(98)01340-2
Vignaud, D., Wallart, X., Mollot, F. (1994) InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface. Journal of Applied Physics, 76 (4). 2324-2329 doi:10.1063/1.357604
Vignaud, D., Wallart, X., Mollot, F. (1998) Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy. Applied Physics Letters, 72 (9). 1075-1077 doi:10.1063/1.120969
Duez, V., VanbĂ©sien, O., Lippens, D., Vignaud, D., Wallart, X., Mollot, F. (1999) Type II and mixed type I–II radiative recombinations in AlInAs–InP heterostructures. Journal of Applied Physics, 85 (4). 2202-2206 doi:10.1063/1.369517
Dhellemmes, S., Godey, S., Wilk, A., Wallart, X., Mollot, F. (2005) As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system. Journal of Crystal Growth, 278 (1). 564-568 doi:10.1016/j.jcrysgro.2004.12.101
 
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