Vote for your favorite mineral in #MinCup25! - Cuprosklodowskite vs. Ikaite
It's radioactive #cuprosklodowskite vs ephemeral #ikaite for today's match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Dehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) XPS study of GaInP on GaAs interface. Applied Surface Science, 123. 523-527 doi:10.1016/s0169-4332(97)00534-5

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleXPS study of GaInP on GaAs interface
JournalApplied Surface Science
AuthorsDehaese, O.Author
Wallart, X.Author
Schuler, O.Author
Mollot, F.Author
Year1998 (January)Volume123
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(97)00534-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900017Long-form Identifiermindat:1:5:9900017:8
GUID0
Full ReferenceDehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) XPS study of GaInP on GaAs interface. Applied Surface Science, 123. 523-527 doi:10.1016/s0169-4332(97)00534-5
Plain TextDehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) XPS study of GaInP on GaAs interface. Applied Surface Science, 123. 523-527 doi:10.1016/s0169-4332(97)00534-5
In(n.d.) Applied Surface Science Vol. 123. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Schuler, O., Dehaese, O., Wallart, X., Mollot, F. (1998) Interface quality and electron transfer at the GaInP on GaAs heterojunction. Journal of Applied Physics, 84 (2). 765-769 doi:10.1063/1.368135
Dehaese, O., Wallart, X., Schuler, O., Mollot, F. (1998) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs. Journal of Applied Physics, 84 (4). 2127-2132 doi:10.1063/1.368357
Dehaese, Olivier, Wallart, Xavier, Schuler, Olivier, Mollot, Francis (1997) As Surface Segregation during the Growth of GaInP on GaAs. Japanese Journal of Applied Physics, 36. 6620-6624 doi:10.1143/jjap.36.6620
Wallart, X., Mollot, F. (2000) Strained layer growth of Ga1−xInxP on GaAs (100) and GaP (100) substrates. Applied Surface Science, 166. 446-450 doi:10.1016/s0169-4332(00)00466-9
Schuler, O, Wallart, X, Mollot, F (1999) A gas-source MBE growth study of strained Ga1−xInxP layers on GaAs. Journal of Crystal Growth, 201. 280-283 doi:10.1016/s0022-0248(98)01340-2
Miwa, R.H., Ferraz, A.C. (1998) Structure and energetics of As dimers on GaAs:(chalcogen) (001) surfaces and GaAs/Te/InAs interface. Applied Surface Science, 123. 449-453 doi:10.1016/s0169-4332(97)00555-2
Wallart, X., Nys, J.P., Dehaese, O., Vincent, G. (1993) Study of the epitaxy of β-FeSi2 by codeposition of Fe and Si on Si(111). Applied Surface Science, 70. 598-602 doi:10.1016/0169-4332(93)90587-2
Hill, P., Lu, J., Haworth, L., Westwood, D.I., Macdonald, J.E. (1998) An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogen. Applied Surface Science, 123. 126-130 doi:10.1016/s0169-4332(97)00539-4
Dehaese, O., Wallart, X., Mollot, F. (1995) Kinetic model of element III segregation during molecular beam epitaxy of III‐III’‐V semiconductor compounds. Applied Physics Letters, 66 (1). 52-54 doi:10.1063/1.114180
Matthai, C.C., Moran, G.A. (1998) Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study. Applied Surface Science, 123. 653-657 doi:10.1016/s0169-4332(97)00442-x
Schmidt, W.G., Käckell, P., Bechstedt, F. (1998) In-induced (4 × 2) reconstructions of GaAs(001) surfaces. Applied Surface Science, 123. 136-140 doi:10.1016/s0169-4332(97)00510-2
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 14, 2025 03:39:46
Go to top of page