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Punchaipetch, Prakaipetch, Miyashita, Makoto, Uraoka, Yukiharu, Fuyuki, Takashi, Sameshima, Toshiyuki, Horii, Sadayoshi (2006) Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l120

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Reference TypeJournal (article/letter/editorial)
TitleImproving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
JournalJapanese Journal of Applied Physics
AuthorsPunchaipetch, PrakaipetchAuthor
Miyashita, MakotoAuthor
Uraoka, YukiharuAuthor
Fuyuki, TakashiAuthor
Sameshima, ToshiyukiAuthor
Horii, SadayoshiAuthor
Year2006 (January 20)Volume45
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.l120Search in ResearchGate
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Mindat Ref. ID15026525Long-form Identifiermindat:1:5:15026525:4
GUID0
Full ReferencePunchaipetch, Prakaipetch, Miyashita, Makoto, Uraoka, Yukiharu, Fuyuki, Takashi, Sameshima, Toshiyuki, Horii, Sadayoshi (2006) Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l120
Plain TextPunchaipetch, Prakaipetch, Miyashita, Makoto, Uraoka, Yukiharu, Fuyuki, Takashi, Sameshima, Toshiyuki, Horii, Sadayoshi (2006) Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l120
In(2006) Japanese Journal of Applied Physics Vol. 45. Japan Society of Applied Physics

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