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Oshima, Takayoshi, Fujita, Shizuo (2006) (111)-Oriented Zn3N2Growth ona-Plane Sapphire Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 45 (11) 8653-8655 doi:10.1143/jjap.45.8653

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Reference TypeJournal (article/letter/editorial)
Title(111)-Oriented Zn3N2Growth ona-Plane Sapphire Substrates by Molecular Beam Epitaxy
JournalJapanese Journal of Applied Physics
AuthorsOshima, TakayoshiAuthor
Fujita, ShizuoAuthor
Year2006 (November 8)Volume45
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.8653Search in ResearchGate
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Mindat Ref. ID15027229Long-form Identifiermindat:1:5:15027229:0
GUID0
Full ReferenceOshima, Takayoshi, Fujita, Shizuo (2006) (111)-Oriented Zn3N2Growth ona-Plane Sapphire Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 45 (11) 8653-8655 doi:10.1143/jjap.45.8653
Plain TextOshima, Takayoshi, Fujita, Shizuo (2006) (111)-Oriented Zn3N2Growth ona-Plane Sapphire Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 45 (11) 8653-8655 doi:10.1143/jjap.45.8653
In(2006, November) Japanese Journal of Applied Physics Vol. 45 (11) Japan Society of Applied Physics

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Sakurai, Keiichiro, Iwata, Daiji, Fujita, Shizuo, Fujita, Shigeo (1999) Growth of ZnO by Molecular Beam Epitaxy Using NO2as Oxygen Source. Japanese Journal of Applied Physics, 38. 2606-2608 doi:10.1143/jjap.38.2606
Oshima, Takayoshi, Okuno, Takeya, Fujita, Shizuo (2009) UV-B Sensor Based on a SnO2Thin Film. Japanese Journal of Applied Physics, 48 (12) 120207 doi:10.1143/jjap.48.120207
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