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Kagamitani, Yuji, Ehrentraut, Dirk, Yoshikawa, Akira, Hoshino, Naruhiro, Fukuda, Tsuguo, Kawabata, Shinichiro, Inaba, Katsuhiko (2006) Ammonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer. Japanese Journal of Applied Physics, 45 (5) 4018-4020 doi:10.1143/jjap.45.4018

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Reference TypeJournal (article/letter/editorial)
TitleAmmonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer
JournalJapanese Journal of Applied Physics
AuthorsKagamitani, YujiAuthor
Ehrentraut, DirkAuthor
Yoshikawa, AkiraAuthor
Hoshino, NaruhiroAuthor
Fukuda, TsuguoAuthor
Kawabata, ShinichiroAuthor
Inaba, KatsuhikoAuthor
Year2006 (May 9)Volume45
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.4018Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15028086Long-form Identifiermindat:1:5:15028086:8
GUID0
Full ReferenceKagamitani, Yuji, Ehrentraut, Dirk, Yoshikawa, Akira, Hoshino, Naruhiro, Fukuda, Tsuguo, Kawabata, Shinichiro, Inaba, Katsuhiko (2006) Ammonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer. Japanese Journal of Applied Physics, 45 (5) 4018-4020 doi:10.1143/jjap.45.4018
Plain TextKagamitani, Yuji, Ehrentraut, Dirk, Yoshikawa, Akira, Hoshino, Naruhiro, Fukuda, Tsuguo, Kawabata, Shinichiro, Inaba, Katsuhiko (2006) Ammonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer. Japanese Journal of Applied Physics, 45 (5) 4018-4020 doi:10.1143/jjap.45.4018
In(2006, May) Japanese Journal of Applied Physics Vol. 45 (5) Japan Society of Applied Physics

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Ehrentraut, Dirk, Kagamitani, Yuji, Yoshikawa, Akira, Hoshino, Naruhiro, Itoh, Hirohisa, Kawabata, Shinichiro, Fujii, Katsushi, Yao, Takafumi, Fukuda, Tsuguo (2008) Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers. Journal of Materials Science, 43. 2270-2275 doi:10.1007/s10853-007-1949-3
Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Kagamitani, Yuji, Hoshino, Naruhiro, Ehrentraut, Dirk, Fukuda, Tsuguo (2008) Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique. Journal of Crystal Growth, 310 (5). 896-899 doi:10.1016/j.jcrysgro.2007.11.060
Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Hoshino, Naruhiro, Kagamitani, Yuji, Ehrentraut, Dirk, Fukuda, Tsuguo (2007) Deep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth. physica status solidi (a), 204 (10). 3509-3513 doi:10.1002/pssa.200723188
Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Kagamitani, Yuji, Hoshino, Naruhiro, Ehrentraut, Dirk, Fukuda, Tsuguo (2007) Near band-edge 3.357 eV emission of Ga-face (0001) GaN grown by ammonothermal method. physica status solidi (a), 204 (12). 4266-4271 doi:10.1002/pssa.200723187
Ehrentraut, Dirk, Kagamitani, Yuji, Fukuda, Tsuguo, Orito, Fumio, Kawabata, Shinichiro, Katano, Kizuku, Terada, Shigeru (2008) Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride. Journal of Crystal Growth, 310 (17). 3902-3906 doi:10.1016/j.jcrysgro.2008.06.017
Ehrentraut, Dirk, Kagamitani, Yuji, Yokoyama, Chiaki, Fukuda, Tsuguo (2008) Physico-chemical features of the acid ammonothermal growth of GaN. Journal of Crystal Growth, 310 (5). 891-895 doi:10.1016/j.jcrysgro.2007.11.090
Sato, Hideto, Ehrentraut, Dirk, Fukuda, Tsuguo (2006) Growth of MgxZn1-xO/ZnO Heterostructures by Liquid Phase Epitaxy. Japanese Journal of Applied Physics, 45 (1) 190-193 doi:10.1143/jjap.45.190
Tomida, Daisuke, Kuroda, Kiyoshi, Hoshino, Naruhiro, Suzuki, Kousuke, Kagamitani, Yuji, Ishiguro, Toru, Fukuda, Tsuguo, Yokoyama, Chiaki (2010) Solubility of GaN in supercritical ammonia with ammonium chloride as a mineralizer. Journal of Crystal Growth, 312 (21). 3161-3164 doi:10.1016/j.jcrysgro.2010.07.020
Kagamitani, Yuji, Pawlak, Dorota Anna, Sato, Hiroki, Yoshikawa, Akira, Machida, Hiroshi, Fukuda, Tsuguo (2002) Annealing Effect in Terbium–Scandium–Aluminum Garnet Single Crystal. Japanese Journal of Applied Physics, 41. 6020-6022 doi:10.1143/jjap.41.6020
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Fukuda, Tsuguo, Ehrentraut, Dirk (2007) Prospects for the ammonothermal growth of large GaN crystal. Journal of Crystal Growth, 305 (2). 304-310 doi:10.1016/j.jcrysgro.2007.04.010
 
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