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Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Hoshino, Naruhiro, Kagamitani, Yuji, Ehrentraut, Dirk, Fukuda, Tsuguo (2007) Deep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth. physica status solidi (a), 204 (10). 3509-3513 doi:10.1002/pssa.200723188

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Reference TypeJournal (article/letter/editorial)
TitleDeep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth
Journalphysica status solidi (a)
AuthorsFujii, KatsushiAuthor
Fujimoto, GakuyoAuthor
Goto, TakenariAuthor
Yao, TakafumiAuthor
Hoshino, NaruhiroAuthor
Kagamitani, YujiAuthor
Ehrentraut, DirkAuthor
Fukuda, TsuguoAuthor
Year2007 (October)Volume204
Issue10
PublisherWiley
DOIdoi:10.1002/pssa.200723188Search in ResearchGate
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Mindat Ref. ID5093182Long-form Identifiermindat:1:5:5093182:4
GUID0
Full ReferenceFujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Hoshino, Naruhiro, Kagamitani, Yuji, Ehrentraut, Dirk, Fukuda, Tsuguo (2007) Deep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth. physica status solidi (a), 204 (10). 3509-3513 doi:10.1002/pssa.200723188
Plain TextFujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Hoshino, Naruhiro, Kagamitani, Yuji, Ehrentraut, Dirk, Fukuda, Tsuguo (2007) Deep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth. physica status solidi (a), 204 (10). 3509-3513 doi:10.1002/pssa.200723188
In(2007, October) physica status solidi (a) Vol. 204 (10) Wiley

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Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Kagamitani, Yuji, Hoshino, Naruhiro, Ehrentraut, Dirk, Fukuda, Tsuguo (2007) Near band-edge 3.357 eV emission of Ga-face (0001) GaN grown by ammonothermal method. physica status solidi (a), 204 (12). 4266-4271 doi:10.1002/pssa.200723187
Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Kagamitani, Yuji, Hoshino, Naruhiro, Ehrentraut, Dirk, Fukuda, Tsuguo (2008) Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique. Journal of Crystal Growth, 310 (5). 896-899 doi:10.1016/j.jcrysgro.2007.11.060
Ehrentraut, Dirk, Kagamitani, Yuji, Yoshikawa, Akira, Hoshino, Naruhiro, Itoh, Hirohisa, Kawabata, Shinichiro, Fujii, Katsushi, Yao, Takafumi, Fukuda, Tsuguo (2008) Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers. Journal of Materials Science, 43. 2270-2275 doi:10.1007/s10853-007-1949-3
Kagamitani, Yuji, Ehrentraut, Dirk, Yoshikawa, Akira, Hoshino, Naruhiro, Fukuda, Tsuguo, Kawabata, Shinichiro, Inaba, Katsuhiko (2006) Ammonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer. Japanese Journal of Applied Physics, 45 (5) 4018-4020 doi:10.1143/jjap.45.4018
Ehrentraut, Dirk, Kagamitani, Yuji, Yokoyama, Chiaki, Fukuda, Tsuguo (2008) Physico-chemical features of the acid ammonothermal growth of GaN. Journal of Crystal Growth, 310 (5). 891-895 doi:10.1016/j.jcrysgro.2007.11.090
Fujii, Katsushi, Goto, Takenari, Yao, Takafumi (2012) Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals. physica status solidi (a), 209 (4). 761-765 doi:10.1002/pssa.201127551
Buckmaster, Ryan, Goto, Takenari, Hanada, Takashi, Fujii, Katsushi, Kato, Takashi, Yao, Takafumi (2007) Metal catalyst enhanced growth of high quality and density GaN dots on Si(111) by implant source growth. physica status solidi (c), 4 (7). 2314-2317 doi:10.1002/pssc.200674896
Koike, Kayo, Sato, Keiichi, Fujii, Katsushi, Goto, Takenari, Yao, Takafumi (2010) Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias. physica status solidi (c), 7 (7). 2221-2223 doi:10.1002/pssc.200983450
Fujii, Katsushi, Koike, Kayo, Atsumi, Mika, Goto, Takenari, Itoh, Takashi, Yao, Takafumi (2012) Photoluminescence changes in n-type GaN samples after photoelectrochemical treatment. physica status solidi (c), 9 (3). 715-718 doi:10.1002/pssc.201100310
Ehrentraut, Dirk, Kagamitani, Yuji, Fukuda, Tsuguo, Orito, Fumio, Kawabata, Shinichiro, Katano, Kizuku, Terada, Shigeru (2008) Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride. Journal of Crystal Growth, 310 (17). 3902-3906 doi:10.1016/j.jcrysgro.2008.06.017
Sato, Keiichi, Fujii, Katsushi, Koike, Kayo, Goto, Takenari, Yao, Takafumi (2009) Anomalous time variation of photocurrent in GaN during photoelectrochemical reaction for H2 gas generation in NaOH aqueous solution. physica status solidi (c), 6. doi:10.1002/pssc.200880814
 
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