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Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko (2007) The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 46 (8) 5122-5124 doi:10.1143/jjap.46.5122

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Reference TypeJournal (article/letter/editorial)
TitleThe Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors
JournalJapanese Journal of Applied Physics
AuthorsYamada, HisashiAuthor
Fukuhara, NoboruAuthor
Hata, MasahikoAuthor
Year2007 (August 6)Volume46
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.46.5122Search in ResearchGate
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Mindat Ref. ID15030629Long-form Identifiermindat:1:5:15030629:2
GUID0
Full ReferenceYamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko (2007) The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 46 (8) 5122-5124 doi:10.1143/jjap.46.5122
Plain TextYamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko (2007) The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 46 (8) 5122-5124 doi:10.1143/jjap.46.5122
In(2007, August) Japanese Journal of Applied Physics Vol. 46 (8) Japan Society of Applied Physics

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Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko (2006) Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 45 (5) 3909-3912 doi:10.1143/jjap.45.3909
Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko (2007) High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors. Journal of Crystal Growth, 298. 857-860 doi:10.1016/j.jcrysgro.2006.10.114
Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko (2007) Si-related defects in InGaP/GaAs heterojunction bipolar transistors. Physica B: Condensed Matter, 401. 44-47 doi:10.1016/j.physb.2007.08.110
Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Akimoto, Katsuhiro (2008) Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors. Journal of Crystal Growth, 310 (23). 5223-5226 doi:10.1016/j.jcrysgro.2008.07.003
Fu, Ssu-I, Cheng, Shiou-Ying, Lai, Po-Hsien, Tsai, Yan-Ying, Hung, Ching-Wen, Liu, Wen-Chau (2007) On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l74
Chang, Yang-Hua, Chang, Zhi-Juan, Hsieh, Yi-Jing (2005) Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 44 (4) 2450-2453 doi:10.1143/jjap.44.2450
Chong, Kwok-Keung, Jenq, Fenq-Lin, Houng, Mau-Phon (2007) Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 46 (3) 974-976 doi:10.1143/jjap.46.974
Takeuchi, Hideo, Yanagisawa, Junichi, Tsuruta, Syuuichi, Yamada, Hisashi, Hata, Masahiko, Nakayama, Masaaki (2010) Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures. Japanese Journal of Applied Physics, 49 (8) 82001 doi:10.1143/jjap.49.082001
Ito, Hiroshi, Nakajima, Osaake, Nagata, Koichi, Makimura, Takashi, Ishibashi, Tadao (1993) Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1500
Ito, Hiroshi, Nagata, Koichi, Nakajima, Osaake, Ishibashi, Tadao (1994) Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l1389
Chang, Chun-Wei, Hsieh, Tung-Ling, Chang, Edward Yi (2006) New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 45 (12) 9029-9032 doi:10.1143/jjap.45.9029
 
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