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Chang, Chun-Wei, Hsieh, Tung-Ling, Chang, Edward Yi (2006) New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 45 (12) 9029-9032 doi:10.1143/jjap.45.9029

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Reference TypeJournal (article/letter/editorial)
TitleNew Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
JournalJapanese Journal of Applied Physics
AuthorsChang, Chun-WeiAuthor
Hsieh, Tung-LingAuthor
Chang, Edward YiAuthor
Year2006 (December 7)Volume45
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.9029Search in ResearchGate
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Mindat Ref. ID15027306Long-form Identifiermindat:1:5:15027306:8
GUID0
Full ReferenceChang, Chun-Wei, Hsieh, Tung-Ling, Chang, Edward Yi (2006) New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 45 (12) 9029-9032 doi:10.1143/jjap.45.9029
Plain TextChang, Chun-Wei, Hsieh, Tung-Ling, Chang, Edward Yi (2006) New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 45 (12) 9029-9032 doi:10.1143/jjap.45.9029
In(2006, December) Japanese Journal of Applied Physics Vol. 45 (12) Japan Society of Applied Physics

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