Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Huang, Jui-Chien, Lin, Yueh-Chin, Tseng, Yu-Ling, Chen, Ke-Shian, Lu, Po-Chin, Lin, Mong-E, Chang, Edward-Yi (2010) A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications. Japanese Journal of Applied Physics, 49 (2) 20215 doi:10.1143/jjap.49.020215

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleA Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
JournalJapanese Journal of Applied Physics
AuthorsHuang, Jui-ChienAuthor
Lin, Yueh-ChinAuthor
Tseng, Yu-LingAuthor
Chen, Ke-ShianAuthor
Lu, Po-ChinAuthor
Lin, Mong-EAuthor
Chang, Edward-YiAuthor
Year2010 (February 5)Volume49
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.49.020215Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15034911Long-form Identifiermindat:1:5:15034911:4
GUID0
Full ReferenceHuang, Jui-Chien, Lin, Yueh-Chin, Tseng, Yu-Ling, Chen, Ke-Shian, Lu, Po-Chin, Lin, Mong-E, Chang, Edward-Yi (2010) A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications. Japanese Journal of Applied Physics, 49 (2) 20215 doi:10.1143/jjap.49.020215
Plain TextHuang, Jui-Chien, Lin, Yueh-Chin, Tseng, Yu-Ling, Chen, Ke-Shian, Lu, Po-Chin, Lin, Mong-E, Chang, Edward-Yi (2010) A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications. Japanese Journal of Applied Physics, 49 (2) 20215 doi:10.1143/jjap.49.020215
In(2010, February) Japanese Journal of Applied Physics Vol. 49 (2) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Chang, Shang-Wen, Chang, Edward Yi, Biswas, Dhrubes, Lee, Cheng-Shih, Chen, Ke-Shian, Tseng, Chao-Wei, Hsieh, Tung-Ling, Wu, Wei-Cheng (2005) Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor. Japanese Journal of Applied Physics, 44 (1) 8-11 doi:10.1143/jjap.44.8
Chang, Chun-Wei, Hsieh, Tung-Ling, Chang, Edward Yi (2006) New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 45 (12) 9029-9032 doi:10.1143/jjap.45.9029
Chang, Shang-Wen, Chang, Edward Yi, Lee, Cheng-Shih, Chen, Ke-Shian, Tseng, Chao-Wei, Tu, Yong-Ye, Lee, Ching-Ting (2005) A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l899
Chang, Edward Yi, Huang, Jui-Chien, Lin, Yueh-Chin, Hsieh, Yen-Chang, Chang, Chia-Yuan (2008) AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers. Japanese Journal of Applied Physics, 47 (9) 7069-7072 doi:10.1143/jjap.47.7069
Chen, Ke-Shian, Chang, Edward Yi, Lin, Chia-Ching, Lee, Cheng-Shih, Huang, Wei-Ching, Lee, Ching-Ting (2007) A Cu-based alloyed Ohmic contact system on n-type GaAs. Applied Physics Letters, 91 (23). 233511pp. doi:10.1063/1.2819687
Chang, Edward Yi, Lin, Yueh-Chin, Chen, Guan-Ji, Lee, Huang-Ming, Huang, Guo-Wei, Biswas, D., Chang, Chun-Yen (2004) Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l871
Chiu, Yu Sheng, Luc, Quang Ho, Lin, Yueh Chin, Huang, Jui Chien, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi (2017) Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications. Japanese Journal of Applied Physics, 56 (9) 94101 doi:10.7567/jjap.56.094101
Huang, Jui-Chien, Hsu, Heng-Tung, Chang, Edward-Yi, Lu, Chung-Yu, Chang, Chia-Ta, Kuo, Fang-Yao, Chen, Yi-Chung, Hsu, Ting-Hung (2010) Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications. Japanese Journal of Applied Physics, 49 (1) 14103 doi:10.1143/jjap.49.014103
Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Miyamoto, Yasuyuki, Wu, Chien-Ying, Chen, Yu-Lin, Hsiao, Yu-Lin (2010) DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology. Japanese Journal of Applied Physics, 49 (1) 10212 doi:10.1143/jjap.49.010212
Yu, Hung Wei, Chung, Chen Chen, Wang, Chin Te, Nguyen, Hong Quan, Tran, Binh Tinh, Lin, Kung Liang, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi (2012) InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10$^{\circ}$ off Misoriented GaAs Substrate. Japanese Journal of Applied Physics, 51. 80208 doi:10.1143/jjap.51.080208
Lin, Yo-Sheng, Lu, Shey-Shi (2004) An Analysis of the Anomalous Dip in Scattering ParameterS11of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l803
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 29, 2025 06:36:00
Go to top of page