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Chang, Edward Yi, Huang, Jui-Chien, Lin, Yueh-Chin, Hsieh, Yen-Chang, Chang, Chia-Yuan (2008) AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers. Japanese Journal of Applied Physics, 47 (9) 7069-7072 doi:10.1143/jjap.47.7069

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Reference TypeJournal (article/letter/editorial)
TitleAlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers
JournalJapanese Journal of Applied Physics
AuthorsChang, Edward YiAuthor
Huang, Jui-ChienAuthor
Lin, Yueh-ChinAuthor
Hsieh, Yen-ChangAuthor
Chang, Chia-YuanAuthor
Year2008 (September 12)Volume47
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.47.7069Search in ResearchGate
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Mindat Ref. ID15032744Long-form Identifiermindat:1:5:15032744:0
GUID0
Full ReferenceChang, Edward Yi, Huang, Jui-Chien, Lin, Yueh-Chin, Hsieh, Yen-Chang, Chang, Chia-Yuan (2008) AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers. Japanese Journal of Applied Physics, 47 (9) 7069-7072 doi:10.1143/jjap.47.7069
Plain TextChang, Edward Yi, Huang, Jui-Chien, Lin, Yueh-Chin, Hsieh, Yen-Chang, Chang, Chia-Yuan (2008) AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers. Japanese Journal of Applied Physics, 47 (9) 7069-7072 doi:10.1143/jjap.47.7069
In(2008, September) Japanese Journal of Applied Physics Vol. 47 (9) Japan Society of Applied Physics

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Chen, Szu-Hung, Chang, Li, Chang, Edward Yi, Chang, Chun-Yen (2002) Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l20
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