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Koyanagi, Tomotsune, Tachi, Kiichi, Okamoto, Kouichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi (2009) Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation. Japanese Journal of Applied Physics, 48 (5) 5 doi:10.1143/jjap.48.05dc02

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
JournalJapanese Journal of Applied Physics
AuthorsKoyanagi, TomotsuneAuthor
Tachi, KiichiAuthor
Okamoto, KouichiAuthor
Kakushima, KuniyukiAuthor
Ahmet, ParhatAuthor
Tsutsui, KazuoAuthor
Sugii, NobuyukiAuthor
Hattori, TakeoAuthor
Iwai, HiroshiAuthor
Year2009 (May 20)Volume48
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.48.05dc02Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15033818Long-form Identifiermindat:1:5:15033818:7
GUID0
Full ReferenceKoyanagi, Tomotsune, Tachi, Kiichi, Okamoto, Kouichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi (2009) Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation. Japanese Journal of Applied Physics, 48 (5) 5 doi:10.1143/jjap.48.05dc02
Plain TextKoyanagi, Tomotsune, Tachi, Kiichi, Okamoto, Kouichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi (2009) Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation. Japanese Journal of Applied Physics, 48 (5) 5 doi:10.1143/jjap.48.05dc02
In(2009, May) Japanese Journal of Applied Physics Vol. 48 (5) Japan Society of Applied Physics

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