Zade, Dariush, Kanda, Takashi, Yamashita, Koji, Kakushima, Kuniyuki, Nohira, Hiroshi, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi (2011) Capacitance–Voltage Characterization of La2O3Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pd03
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Capacitance–Voltage Characterization of La2O3Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Zade, Dariush | Author | |
| Kanda, Takashi | Author | ||
| Yamashita, Koji | Author | ||
| Kakushima, Kuniyuki | Author | ||
| Nohira, Hiroshi | Author | ||
| Ahmet, Parhat | Author | ||
| Tsutsui, Kazuo | Author | ||
| Nishiyama, Akira | Author | ||
| Sugii, Nobuyuki | Author | ||
| Natori, Kenji | Author | ||
| Hattori, Takeo | Author | ||
| Iwai, Hiroshi | Author | ||
| Year | 2011 (October 1) | Volume | 50 |
| Issue | 10 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.50.10pd03Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15037130 | Long-form Identifier | mindat:1:5:15037130:6 |
| GUID | 0 | ||
| Full Reference | Zade, Dariush, Kanda, Takashi, Yamashita, Koji, Kakushima, Kuniyuki, Nohira, Hiroshi, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi (2011) Capacitance–Voltage Characterization of La2O3Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pd03 | ||
| Plain Text | Zade, Dariush, Kanda, Takashi, Yamashita, Koji, Kakushima, Kuniyuki, Nohira, Hiroshi, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi (2011) Capacitance–Voltage Characterization of La2O3Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pd03 | ||
| In | (2011, October) Japanese Journal of Applied Physics Vol. 50 (10) Japan Society of Applied Physics | ||
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