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Okada, Narihito, Ishida, Fumio, Mitsui, Yasutomo, Tadatomo, Kazuyuki, Mangyo, Hirotaka, Kobayashi, Yoshihiko, Ono, Hiroyuki, Ikenaga, Kazutada, Yano, Yoshiki, Matsumoto, Koh (2009) Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3with Intentionally Added H2O. Japanese Journal of Applied Physics, 48 (6) 62102 doi:10.1143/jjap.48.062102

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Reference TypeJournal (article/letter/editorial)
TitleEvaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3with Intentionally Added H2O
JournalJapanese Journal of Applied Physics
AuthorsOkada, NarihitoAuthor
Ishida, FumioAuthor
Mitsui, YasutomoAuthor
Tadatomo, KazuyukiAuthor
Mangyo, HirotakaAuthor
Kobayashi, YoshihikoAuthor
Ono, HiroyukiAuthor
Ikenaga, KazutadaAuthor
Yano, YoshikiAuthor
Matsumoto, KohAuthor
Year2009 (June 22)Volume48
Issue6
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.48.062102Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15033866Long-form Identifiermindat:1:5:15033866:8
GUID0
Full ReferenceOkada, Narihito, Ishida, Fumio, Mitsui, Yasutomo, Tadatomo, Kazuyuki, Mangyo, Hirotaka, Kobayashi, Yoshihiko, Ono, Hiroyuki, Ikenaga, Kazutada, Yano, Yoshiki, Matsumoto, Koh (2009) Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3with Intentionally Added H2O. Japanese Journal of Applied Physics, 48 (6) 62102 doi:10.1143/jjap.48.062102
Plain TextOkada, Narihito, Ishida, Fumio, Mitsui, Yasutomo, Tadatomo, Kazuyuki, Mangyo, Hirotaka, Kobayashi, Yoshihiko, Ono, Hiroyuki, Ikenaga, Kazutada, Yano, Yoshiki, Matsumoto, Koh (2009) Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3with Intentionally Added H2O. Japanese Journal of Applied Physics, 48 (6) 62102 doi:10.1143/jjap.48.062102
In(2009, June) Japanese Journal of Applied Physics Vol. 48 (6) Japan Society of Applied Physics

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Okada, Narihito, Tadatomo, Kazuyuki, Yamane, Keisuke, Mangyo, Hirotaka, Kobayashi, Yoshihiko, Ono, Hiroyuki, Ikenaga, Kazutada, Yano, Yoshiki, Matsumoto, Koh (2014) Performance of InGaN/GaN light-emitting diodes grown using NH3with oxygen-containing impurities. Japanese Journal of Applied Physics, 53 (8) 81001 doi:10.7567/jjap.53.081001
Sugimoto, Kohei, Okada, Narihito, Kurai, Satoshi, Yamada, Yoichi, Tadatomo, Kazuyuki (2018) Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer. Japanese Journal of Applied Physics, 57 (6) 62101 doi:10.7567/jjap.57.062101
Okada, Narihito, Murata, Tohru, Tadatomo, Kazuyuki, Chang, Huang C., Watanabe, Kazuhiro (2009) Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate. Japanese Journal of Applied Physics, 48 (12) 122103 doi:10.1143/jjap.48.122103
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Sugimoto, Kohei, Denpo, Yusho, Okada, Narihito, Tadatomo, Kazuyuki (2016) Effect of superlattice on light output power of InGaN-based light-emitting diodes fabricated on underlying GaN substrates with different dislocation densities. physica status solidi (c), 13 (5). 270-273 doi:10.1002/pssc.201510203
Okada, Narihito, Kashihara, Hiroyuki, Sugimoto, Kohei, Yamada, Yoichi, Tadatomo, Kazuyuki (2015) Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes. Journal of Applied Physics, 117 (2). 25708pp. doi:10.1063/1.4905914
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Shinagawa, Taku, Abe, Yuki, Matsumoto, Hiroyuki, Li, BoCheng, Murakami, Kazuma, Okada, Narihito, Tadatomo, Kazuyuki, Kannaka, Masato, Fujii, Hideo (2010) Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography. physica status solidi (c), 7 (7). 2165-2167 doi:10.1002/pssc.200983518
Okada, Narihito, Yamada, Yoichi, Tadatomo, Kazuyuki (2012) Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN. Journal of Applied Physics, 111 (4). 43508pp. doi:10.1063/1.3684606
Okada, Narihito, Uchida, Katsumi, Miyoshi, Seita, Tadatomo, Kazuyuki (2012) Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate. physica status solidi (a), 209 (3). 469-472 doi:10.1002/pssa.201100385
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