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Ikenaga, Kazutada, Mishima, Akira, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh (2016) Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fe04

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor
JournalJapanese Journal of Applied Physics
AuthorsIkenaga, KazutadaAuthor
Mishima, AkiraAuthor
Yano, YoshikiAuthor
Tabuchi, ToshiyaAuthor
Matsumoto, KohAuthor
Year2016 (May 1)Volume55
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.55.05fe04Search in ResearchGate
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Mindat Ref. ID15046346Long-form Identifiermindat:1:5:15046346:9
GUID0
Full ReferenceIkenaga, Kazutada, Mishima, Akira, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh (2016) Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fe04
Plain TextIkenaga, Kazutada, Mishima, Akira, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh (2016) Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fe04
In(2016, May) Japanese Journal of Applied Physics Vol. 55 (5) Japan Society of Applied Physics

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