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Ubukata, Akinori, Yano, Yoshiki, Yamaoka, Yuya, Kitamura, Yuichiro, Tabuchi, Toshiya, Matsumoto, Koh (2013) High growth rates of AlN and AlGaN on 8β€³ silicon wafer using metal-organic vapor phase epitaxy reactor. physica status solidi (c), 10 (11). 1353-1356 doi:10.1002/pssc.201300255

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Reference TypeJournal (article/letter/editorial)
TitleHigh growth rates of AlN and AlGaN on 8β€³ silicon wafer using metal-organic vapor phase epitaxy reactor
Journalphysica status solidi (c)
AuthorsUbukata, AkinoriAuthor
Yano, YoshikiAuthor
Yamaoka, YuyaAuthor
Kitamura, YuichiroAuthor
Tabuchi, ToshiyaAuthor
Matsumoto, KohAuthor
Year2013 (November)Volume10
Issue11
PublisherWiley
DOIdoi:10.1002/pssc.201300255Search in ResearchGate
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Mindat Ref. ID5123487Long-form Identifiermindat:1:5:5123487:0
GUID0
Full ReferenceUbukata, Akinori, Yano, Yoshiki, Yamaoka, Yuya, Kitamura, Yuichiro, Tabuchi, Toshiya, Matsumoto, Koh (2013) High growth rates of AlN and AlGaN on 8β€³ silicon wafer using metal-organic vapor phase epitaxy reactor. physica status solidi (c), 10 (11). 1353-1356 doi:10.1002/pssc.201300255
Plain TextUbukata, Akinori, Yano, Yoshiki, Yamaoka, Yuya, Kitamura, Yuichiro, Tabuchi, Toshiya, Matsumoto, Koh (2013) High growth rates of AlN and AlGaN on 8β€³ silicon wafer using metal-organic vapor phase epitaxy reactor. physica status solidi (c), 10 (11). 1353-1356 doi:10.1002/pssc.201300255
In(2013, November) physica status solidi (c) Vol. 10 (11) Wiley

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