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Yamaguchi, Tadashi, Kashihara, Keiichiro, Kudo, Shuichi, Okudaira, Tomonori, Tsutsumi, Toshiaki, Maekawa, Kazuyoshi, Asai, Koyu, Kojima, Masayuki (2009) Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+Ion-Implantation Technique. Japanese Journal of Applied Physics, 48 (6) 66513 doi:10.1143/jjap.48.066513

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+Ion-Implantation Technique
JournalJapanese Journal of Applied Physics
AuthorsYamaguchi, TadashiAuthor
Kashihara, KeiichiroAuthor
Kudo, ShuichiAuthor
Okudaira, TomonoriAuthor
Tsutsumi, ToshiakiAuthor
Maekawa, KazuyoshiAuthor
Asai, KoyuAuthor
Kojima, MasayukiAuthor
Year2009 (June 22)Volume48
Issue6
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.48.066513Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15033909Long-form Identifiermindat:1:5:15033909:2
GUID0
Full ReferenceYamaguchi, Tadashi, Kashihara, Keiichiro, Kudo, Shuichi, Okudaira, Tomonori, Tsutsumi, Toshiaki, Maekawa, Kazuyoshi, Asai, Koyu, Kojima, Masayuki (2009) Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+Ion-Implantation Technique. Japanese Journal of Applied Physics, 48 (6) 66513 doi:10.1143/jjap.48.066513
Plain TextYamaguchi, Tadashi, Kashihara, Keiichiro, Kudo, Shuichi, Okudaira, Tomonori, Tsutsumi, Toshiaki, Maekawa, Kazuyoshi, Asai, Koyu, Kojima, Masayuki (2009) Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+Ion-Implantation Technique. Japanese Journal of Applied Physics, 48 (6) 66513 doi:10.1143/jjap.48.066513
In(2009, June) Japanese Journal of Applied Physics Vol. 48 (6) Japan Society of Applied Physics

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