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Yamaguchi, Tadashi, Kawasaki, Yoji, Yamashita, Tomohiro, Miura, Noriko, Mizuo, Mariko, Tsuchimoto, Jun-ichi, Eikyu, Katsumi, Maekawa, Kazuyoshi, Fujisawa, Masahiko, Asai, Koyu (2011) Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04da02

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Reference TypeJournal (article/letter/editorial)
TitleAnalytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
JournalJapanese Journal of Applied Physics
AuthorsYamaguchi, TadashiAuthor
Kawasaki, YojiAuthor
Yamashita, TomohiroAuthor
Miura, NorikoAuthor
Mizuo, MarikoAuthor
Tsuchimoto, Jun-ichiAuthor
Eikyu, KatsumiAuthor
Maekawa, KazuyoshiAuthor
Fujisawa, MasahikoAuthor
Asai, KoyuAuthor
Year2011 (April 20)Volume50
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.04da02Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15037654Long-form Identifiermindat:1:5:15037654:7
GUID0
Full ReferenceYamaguchi, Tadashi, Kawasaki, Yoji, Yamashita, Tomohiro, Miura, Noriko, Mizuo, Mariko, Tsuchimoto, Jun-ichi, Eikyu, Katsumi, Maekawa, Kazuyoshi, Fujisawa, Masahiko, Asai, Koyu (2011) Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04da02
Plain TextYamaguchi, Tadashi, Kawasaki, Yoji, Yamashita, Tomohiro, Miura, Noriko, Mizuo, Mariko, Tsuchimoto, Jun-ichi, Eikyu, Katsumi, Maekawa, Kazuyoshi, Fujisawa, Masahiko, Asai, Koyu (2011) Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04da02
In(2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics

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